Addition of aluminum to solution processed conductive indium tin oxide thin film for an oxide thin film transistor

Cited 28 time in webofscience Cited 0 time in scopus
  • Hit : 143
  • Download : 436
Aluminum was added to a solution-processed conductive indium tin oxide thin film to be optimized as a channel layer for a thin film transistor (TFT). The conductive crystalline thin film becomes an amorphous semiconductor as the band gap enlarges with increasing Al content. Also, systematic variation in TFT characteristics was observed clearly, displaying transformation to a semiconductor. At the final composition of (Al(2)O(3))(0.3)(In(2)O(3))(0.6)(SnO(2))(0.1), the film channel layer exhibits a high mobility of 13.3 cm(2) V(-1) s(-1), a high on-to-off ratio of 10(7) and a low subthreshold swing of 1.01 V/dec. (C) 2010 American Institute of Physics. [doi:10.1063/1.3442482]
Publisher
AMER INST PHYSICS
Issue Date
2010-05
Language
English
Article Type
Article
Keywords

SEMICONDUCTORS; TEMPERATURE

Citation

APPLIED PHYSICS LETTERS, v.96, no.21, pp.212109 - 212109

ISSN
0003-6951
URI
http://hdl.handle.net/10203/25096
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 28 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0