High Stability InGaZnO4 Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers

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We report on the fabrication and characterization of sputter-deposited poly(methyl methacrylate) (PMMA) thin films used as gate insulators as well as passivation layers in high performance InGaZnO4 thin-film transistors (TFTs). Sputter-deposited PMMA thin films exhibited a dielectric constant of 4.3 and low leakage current characteristics (<similar to 2x10(-8) A/cm(2) at 0.3 MV/cm). The InGaZnO4 TFTs utilizing PMMA gate insulators and PMMA passivation layers exhibited a high on/off current ratio of 4.08x10(6) and a high field-effect mobility of 36.1 cm(2)/V s. Threshold voltage and field-effect mobility remained constant after aging in air atmosphere for 5 months.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
2009
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; POLYMER; PERFORMANCE; MOBILITY; PLASMA

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.296 - 298

ISSN
1099-0062
DOI
10.1149/1.3142470
URI
http://hdl.handle.net/10203/96822
Appears in Collection
MS-Journal Papers(저널논문)
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