High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

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Thin film transistors with a channel of Zn-In-Sn-O were fabricated via a combinatorial rf sputtering method. It was found that the role of the In atoms is to enhance the mobility and to shift the threshold voltage (V-th) negatively. On the other hand, the Sn fraction is critical for improving the overall trap density including the density-of-states of the bulk channel layer and the interfacial trap density at the ZnInSnO interface. The optimized transistor was obtained at a compositional ratio of Zn:In:Sn=40:20:40, which exhibited an excellent subthreshold gate swing of 0.12 V/decade, V-th of -0.4 V, and high I-on/off ratio of >10(9) as well as a high field-effect mobility of 24.6 cm(2)/V s.
Publisher
AMER INST PHYSICS
Issue Date
2009-08
Language
English
Article Type
Article
Keywords

OXIDE SEMICONDUCTORS; CARRIER TRANSPORT; ROOM-TEMPERATURE

Citation

APPLIED PHYSICS LETTERS, v.95, no.7

ISSN
0003-6951
DOI
10.1063/1.3206948
URI
http://hdl.handle.net/10203/201761
Appears in Collection
MS-Journal Papers(저널논문)
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