Browse by Subject leakage current

Showing results 1 to 22 of 22

1
(A) study on the $HfO_2/Al_2O_3$ nanolaminated thin film by plasma-enhanced atomic layer deposition = PEALD 법으로 증착된 $HfO_2/Al_2O_3$ 박막 증착 및 특성에 관한 연구link

Cha, Eun-Soo; 차은수; et al, 한국과학기술원, 2005

2
Annealing of RuO2 and Ru bottom electrodes and its effects on the electrical properties of (Ba,Sr)TiO3 thin films

Kim, Ho Gi, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.1, pp.284 - 289, 1998

3
Comparative study on the radiation damage of a-Si : H p-i-n diodes made by PECVD and ion shower doping

Kim, Heejoon; Cho, Gyuseong; Lee, Taehoon; Kim, youngsoo, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.49, no.5, pp.2244 - 2249, 2002-10

4
Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices

Lim, Sehee; Goh, Youngin; Lee, Young Kyu; Ko, Dong Han; Hwang, Junghyeon; Jeong, Yeongseok; Shin, Hunbeom; et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.58, no.7, pp.1860 - 1870, 2023-07

5
Effect of Off-state Stress on Gate-Induced Drain Leakage by Interface Traps in Buried-Gate FETs

Lee, Geon-Beom; Kim, Choong-Ki; Yoo, Min-Soo; Hur, Jae; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.12, pp.5126 - 5132, 2019-11

6
Effects of electrodes on the electric properties of Pb(Zr,Ti)O-3 films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Chung, SO; Lee, HC; Lee, Won-Jong, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.3A, pp.1203 - 1209, 2000-03

7
Lookup table-based adaptive body biasing of multiple macros = 룩업 테이블을 이용한 다중 매크로 블록의 어댑티브 바디 바이어싱link

Choi, Byung-hee; 최병희; et al, 한국과학기술원, 2008

8
Minimizing Leakage Power of Sequential Circuits through Mixed-V-t Flip-Flops and Multi-V-t Combinational Gates

Kim, Jaehyun; Oh, Chungki; Shin, Youngsoo, ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS, v.15, no.1, 2009-12

9
Multi-layer high-kappa interpoly dielectric for floating gate flash memory devices

Zhang, L; He, W; Chan, DSH; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.52, pp.564 - 570, 2008-04

10
Power Gating: Circuits, Design Methodologies, and Best Practice for Standard-Cell VLSI Designs

Shin, Young-Soo; Seomun, Jun; Choi, Kyu-Myung; Sakurai, Takayasu, ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS, v.15, no.4, 2010-09

11
Preparation and characterization of Pb(Zr,Ti)O-3 films deposited on Pt/RuO2 hybrid electrode for ferroelectric random access memory devices

Lee, HC; Lee, Won-Jong, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.11, pp.6566 - 6573, 2001-11

12
Preparation and electrical properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition

Chung, HJ; Choi, JH; Lee, JeongYong; Woo, Seong-Ihl, THIN SOLID FILMS, v.382, no.1-2, pp.106 - 112, 2001-02

13
Pt/RuO2 hybrid bottom electrodes and their effects on the electrical properties of (Ba,Sr)TiO3 thin films

Kim, Ho Gi, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.3A, pp.958 - 962, 1998

14
Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.39, no.7B, pp.757 - 759, 2000-07

15
Semicustom design methodology for power gated circuits for low leakage applications = 낮은 누설 전류를 갖는 응용을 위한 파워 게이팅 회로의 세미커스텀 설계 방법link

Kim, Hyung-Ock; 김형옥; et al, 한국과학기술원, 2009

16
Signal Integrity Analysis of Through-Silicon Via (TSV) With a Silicon Dioxide Well to Reduce Leakage Current for High-Bandwidth Memory Interface

Kim, Hyunwoong; Lee, Seonghi; Park, Jongcheol; Shin, Yujun; Woo, Seongho; Kim, Jongwook; Cho, Jaeyong; et al, IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, v.13, no.5, pp.700 - 714, 2023-05

17
Skewed Flip-Flop and Mixed-V-t Gates for Minimizing Leakage in Sequential Circuits

Seomun, Jun; Kim, Jae-Hyun; Shin, Young-Soo, IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, v.27, pp.1956 - 1968, 2008-11

18
Skewed flip-flop transformation for minimizing leakage in sequential circuits = 순차 회로의 누설 전류를 줄이기 위한 비대칭 플립 플롭 변환link

Seomun, Jun; 서문, 준; et al, 한국과학기술원, 2007

19
Stacked-FET linear SOI CMOS SPDT antenna switch with input P1 dB greater than 40 dBm

Im, Dong-Gu; Lee, Kwy-Ro, IEICE ELECTRONICS EXPRESS, v.9, no.24, pp.1813 - 1822, 2012-12

20
Thermal stability and electrical properties of SrBi2Ta2-xNbxO9/IrOx capacitors with Pt top electrode

Kweon, SY; Choi, Si-Kyung; Yang, WS; Yeom, SJ; Roh, JS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.9A, pp.5275 - 5280, 2001-09

21
금속유기화학기상증착법을 이용한 heavily doped Si 기판에서의 $CoSi_2$ layer의 성장거동 및 접합특성에 관한 연구 = Growth behavior of $CoSi_2$ layer on heavily doped Si and junction characteristics using metalorganic chemical vapor depositionlink

이희승; Lee, Heui-Seung; et al, 한국과학기술원, 2002

22
소수운반자 수명 측정을 이용한 HgCdTe 표면특성분석 = Surface property analysis of HgCdTe by lifetime meausrementlink

이민영; Lee, Min-Yung; et al, 한국과학기술원, 2002

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