금속유기화학기상증착법을 이용한 heavily doped Si 기판에서의 $CoSi_2$ layer의 성장거동 및 접합특성에 관한 연구Growth behavior of $CoSi_2$ layer on heavily doped Si and junction characteristics using metalorganic chemical vapor deposition
- Advisors
- 안병태researcher; Ahn, Byung-Taeresearcher
- Description
- 한국과학기술원 : 재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 2002
- Identifier
- 174572/325007 / 000985311
- Language
- kor
- Description
학위논문(박사) - 한국과학기술원 : 재료공학과, 2002.2, [ iv, 150 p. ]
- Keywords
에피 성장; 금속유기화학기상증착법; heavily doped Si; 코발트 실리사이드; 누설 전류; leakage current; epitaxial growth; MOCVD; heavily doped Si; cobalt silicide
- Appears in Collection
- MS-Theses_Ph.D.(박사논문)
- Files in This Item
- There are no files associated with this item.
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