Browse by Subject GE
Showing results 1 to 41 of 41
| 1ST-PRINCIPLES STUDY OF THE STRUCTURAL-PROPERTIES OF SN UNDER PRESSURE CHEONG, BH; Chang, Kee-Joo, PHYSICAL REVIEW B, v.44, no.9, pp.4103 - 4108, 1991-09 |
| A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure Lim, YS; Jeong, JS; Lee, JeongYong; Kim, HS; Shon, HK; Kim, HK; Moon, DW, JOURNAL OF ELECTRONIC MATERIALS, v.31, no.5, pp.529 - 534, 2002-05 |
| Anionic Doping and Cationic Site Preference in CaYb(4)Al(2)5b(6-x)Ge(x) (x=0.2, 0.5, 0.7): Origin of the Enhanced Seebeck Coefficient and the Structural Transformation Lim, Sung-Ji; Nam, Gnu; Shin, Seungeun; Ahn, Kyunghan; Lee, Yunho; You, Tae-Soo, INORGANIC CHEMISTRY, v.58, no.9, pp.5827 - 5836, 2019-05 |
Atomic-scale combination of germanium-zinc nanofibers for structural and electrochemical evolution Song, Gyujin; Cheong, Jun Young; Kim, Chanhoon; Luo, Langli; Hwang, Chihyun; Choi, Sungho; Ryu, Jaegeon; et al, NATURE COMMUNICATIONS, v.10, 2019-05 |
| Colloidal Synthesis of Infrared-Emitting Germanium Nanocrystals Lee, DohChang; Pietryga, JM; Robel, I; Werder, DJ; Schaller, RD; Klimov, VI, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.131, no.10, pp.3436 - 3436, 2009-03 |
| Creation and annihilation of single atom vacancy during subsurface diffusion Choi, J; Lim, DK; Kim, Y; Kim, DH; Kim, Sehun, PHYSICAL REVIEW B, v.82, no.20, 2010-11 |
| Crystal structure and atomic arrangement of delta-phase Sb-Te binary alloy Sun, CW; Lee, JeongYong; Youm, MS; Kim, YT, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.12, pp.9157 - 9161, 2006-12 |
| Crystal Structure, Chemical Bonding and Magnetism Studies for Three Quinary Polar Intermetallic Compounds in the (Eu1-xCax)(9)In-8(Ge1-ySny)(8) (x=0.66, y=0.03) and the (Eu1-xCax)(3)In(Ge3-ySn1+y) (x=0.66, 0.68; y=0.13, 0.27) Phases Woo, Hyein; Jang, Eunyoung; Kim, Jin; Lee, Yunho; Kim, Jongsik; You, Tae-Soo, INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES, v.16, no.4, pp.9017 - 9036, 2015-04 |
| Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier Zang, H.; Lee, S. J.; Loh, W. Y.; Wang, J.; Chua, K. T.; Yu, M. B.; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.2, pp.161 - 164, 2008-02 |
| Demonstration of high-performance PMOSFETs using Si-SixGe1-x-Si quantum wells with high-kappa/metal-gate stacks Majhi, P; Kalra, P; Harris, R; Choi, KJ; Heh, D; Oh, J; Kelly, D; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.1, pp.99 - 101, 2008-01 |
| Dislocation scatterings in p-type Si1-xGex under weak electric field Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.26, no.49, 2015-12 |
| Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure Kim, Gwang-Sik; Yoo, Gwangwe; Seo, Yujin; Kim, Seung-Hwan; Cho, Karam; Cho, Byung-Jin; Shin, Changhwan; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.709 - 712, 2016-06 |
| Exact Kohn-Sham exchange kernel for insulators and its long-wavelength behavior Kim, Yong-Hoon; Gorling, A, PHYSICAL REVIEW B, v.66, no.3, 2002-07 |
| Fermi-Level Unpinning Technique with Excellent Thermal Stability. for n-Type Germanium Kim, Gwang-Sik; Kim, Seung-Hwan; Lee, Tae In; Cho, Byung Jin; Choi, Changhwan; Shin, Changhwan; Shim, Joon Hyung; et al, ACS APPLIED MATERIALS & INTERFACES, v.9, no.41, pp.35988 - 35997, 2017-10 |
| First-principles calculation of the Coulomb pseudopotential mu* for the simple hexagonal phase of Si Jin, YG; Lee, KH; Chang, Kee-Joo, JOURNAL OF PHYSICS-CONDENSED MATTER, v.9, no.30, pp.6351 - 6358, 1997-07 |
| FORMATION OF EPI-C49 TISI2/SI(111) BY SOLID-PHASE EPITAXIAL-GROWTH CHOI, CK; YANG, SJ; RYU, JY; Lee, JeongYong; LEE, YP; PARK, HH; LEE, EW; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.26, no.2, pp.148 - 152, 1993-04 |
| Functionalized Bonding Materials and Interfaces for Heterogeneously Layer-Stacked Applications Kim, Sanghyeon; Han, Jae-Hoon; Choi, Won Jun; Song, Jin Dong; Kim, Hyung-jun, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.74, no.2, pp.82 - 87, 2019-01 |
| Germanium nanowire synthesis: An example of solid-phase seeded growth with nickel nanocrystals Tuan, HY; Lee, DohChang; Hanrath, T; Korgel, BA, CHEMISTRY OF MATERIALS, v.17, no.23, pp.5705 - 5711, 2005-11 |
| High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets Kim, Hyun Jung; Park, Yeonjoon; Bae, Hyung Bin; Choi, Sang H., ADVANCES IN CONDENSED MATTER PHYSICS, v.785415, 2015 |
| Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs Kim, Gun-Hee; Bae, Hagyoul; Hur, Jae; Kim, Choong-Ki; Lee, Geon-Beom; Bang, Tewook; Son, Yoon-Ik; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.2, pp.419 - 423, 2018-02 |
| Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks Seo, Yujin; Kim, Choong-Ki; Lee, Tae-In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang-Kyu; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.3998 - 4001, 2017-10 |
| Mass-scalable synthesis of 3D porous germanium-carbon composite particles as an ultra-high rate anode for lithium ion batteries Duc Tung Ngo; Le, Hang T. T.; Kim, Chanhoon; Lee, Jae-Young; Fisher, John G.; Kim, Il-Doo; Park, Chan-Jin, ENERGY ENVIRONMENTAL SCIENCE, v.8, no.12, pp.3577 - 3588, 2015-08 |
| Microstructure-ionic conductivity relationships in perovskite lithium lanthanum titanate Kim, Ho-Gi; Kim, J.-G.; Chung, H.-T., JOURNAL OF MATERIALS SCIENCE LETTERS, v.18, no.6, pp.493 - 496, 1999 |
| Nano-scale island (dot)-induced optical emission in InGaN quantum wells Kim, KS; Lee, WH; Kim, CS; Yang, GM; Hong, CH; Suh, EK; Lim, KY; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.141 - 146, 2001-07 |
| Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading Cho, MH; Moon, P; Kim, HJ; Na, H; Seo, HC; Shin, Y; Moon, DW; et al, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.201, pp.2818 - 2822, 2004-09 |
| Observation of strong higher-order lattice anharmonicity in Raman and infrared spectra Yang, Xiaolong; Feng, Tianli; Kang, Joon Sang; Hu, Yongjie; Li, Ju; Ruan, Xiulin, PHYSICAL REVIEW B, v.101, no.16, 2020-04 |
| Physical routes for the synthesis of kesterite Ratz, T.; Brammertz, G.; Caballero, R.; Leon, M.; Canulescu, S.; Schou, J.; Guetay, L.; et al, JOURNAL OF PHYSICS-ENERGY, v.1, no.4, 2019-10 |
| PRESSURE DEPENDENCES OF BAND-GAPS AND OPTICAL-PHONON FREQUENCY IN CUBIC SIC CHEONG, BH; Chang, Kee-Joo; COHEN, ML, PHYSICAL REVIEW B, v.44, no.3, pp.1053 - 1056, 1991-07 |
| Raman spectroscopic study of surface layer in fluorine-implanted Si Y.-J. Park; Kim, Jong Jean; Y.-J. Mo, JOURNAL OF APPLIED PHYSICS, v.80, no.9, pp.5509 - 5511, 1996 |
| Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon Zeng, YP; Lu, YF; Shen, ZX; Sun, WX; Yu, T; Liu, L; Zeng, JN; et al, NANOTECHNOLOGY, v.15, no.5, pp.658 - 662, 2004-05 |
| Reconstructions and step structures on vicinal Si(001) surfaces by interaction with Bi Lee, YJ; Lee, SY; Kim, Sehun, JOURNAL OF PHYSICS-CONDENSED MATTER, v.11, no.8, pp.1953 - 1960, 1999-03 |
| Resonant cavity germanium photodetector via stacked single-crystalline nanomembranes Cho, Minkyu; Seo, Jung-Hun; Kim, Munho; Lee, Jaeseong; Liu, Dong; Zhou, Weidong; Yu, Zongfu; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.34, no.4, 2016-07 |
| Schottky barrier height modulation of metal-interlayer-semiconductor structure depending on contact surface orientation for multi-gate transistors Kim, Gwang-Sik; Lee, Tae In; Cho, Byung Jin; Yu, Hyun-Yong, APPLIED PHYSICS LETTERS, v.114, no.1, 2019-01 |
| Single and double-doping effects on the thermoelectric properties of two Zintl compounds: Eu11Bi8.07(2)Sn1.93 and Eu10.74(2)K0.26Bi9.14(2)Sn0.86 Choi, Woongjin; Lee, Junsu; Lee, Yunho; Ahn, Kyunghan; You, Tae-Soo, DALTON TRANSACTIONS, v.46, no.35, pp.11840 - 11850, 2017-09 |
| Strain-induced diffusion in a strained Si1-xGex/Si heterostructure Lim, YS; Lee, JeongYong; Kim, HS; Moon, DW, APPLIED PHYSICS LETTERS, v.77, no.25, pp.4157 - 4159, 2000-12 |
| Strained-SiGe complementary MOSFETs adopting different thicknesses of silicon cap layers for low power and high performance applications Mheen, B; Song, YJ; Kang, JY; Hong, Songcheol, ETRI JOURNAL, v.27, no.4, pp.439 - 445, 2005-08 |
| Study of Interaction between Incident Silicon and Germanium Fluxes and SiO2 Layer Using Solid-Source Molecular Beam Epitaxy Yun, Sun-Jin; Lee, Seung-Chang; Kim, Bo-Woo; Kang, Sang-Won, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.12, no.2, pp.1167 - 1169, 1994-03 |
| Tensile-strained germanium CMOS integration on silicon Zang, H; Loh, WY; Ye, JD; Lo, GQ; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.28, no.12, pp.1117 - 1119, 2007-12 |
| The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts Seo, Yu Jin; Lee, Sukwon; Baek, Seung-heon Chris; Hwang, Wan Sik; Yu, Hyun-Yong; Lee, Seok-Hee; Cho, Byung-Jin, IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.997 - 1000, 2015-10 |
| Theoretical study of the structural phase transformation of BeO under pressure Park, CJ; Lee, SG; Ko, YJ; Chang, Kee-Joo, PHYSICAL REVIEW B, v.59, no.21, pp.13501 - 13504, 1999-06 |
| Vacancy clustering and diffusion in germanium using kinetic lattice Monte Carlo simulations Kang J.W.; Choi Y.G.; Lee J.H.; Lee S.H.; Oh H.J., MOLECULAR SIMULATION, v.35, no.3, pp.234 - 240, 2009 |
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- 31,300 2020 - 2024
- 99,975 2010 - 2019
- 75,670 2000 - 2009
- 44,727 1990 - 1999
- 14,360 1980 - 1989
- 62 1964 - 1969