A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure

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A study on the dry thermal oxidation of a graded SiGe layer was performed. To reduce the Ge pileup effect during the thermal oxidation, the SiGe layer was deposited with much lower Ge content near the free surface than near the SiGe/Si heterointerface. After dry thermal oxidation at 900degreesC, the Ge composition in the pileup layer was significantly reduced and strain relaxation by defect formation was prevented due to the graded Ge distribution. To homogenize the Ge distribution between the pileup layer and remaining SiGe layer, the oxidized layers were postannealed. The homogenization is significantly enhanced by strain-induced diffusion, and it was confirmed by uphill diffusion of Ge. This result can propose an alternative oxidation method of strained SiGe/Si heterostructures.
Publisher
MINERALS METALS MATERIALS SOC
Issue Date
2002-05
Language
English
Article Type
Article; Proceedings Paper
Keywords

CHEMICAL-VAPOR-DEPOSITION; OZONE-INDUCED OXIDATION; STRAINED LAYERS; SI1-XGEX; GE; INTERDIFFUSION; SUPERLATTICES; DIFFUSION; KINETICS; SILICON

Citation

JOURNAL OF ELECTRONIC MATERIALS, v.31, no.5, pp.529 - 534

ISSN
0361-5235
URI
http://hdl.handle.net/10203/78906
Appears in Collection
MS-Journal Papers(저널논문)
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