Browse by Subject GATE DIELECTRICS
Showing results 1 to 35 of 35
| A Sub-20 nm Organic/Inorganic Hybrid Dielectric for Ultralow-Power Organic Thin-Film Transistor (OTFT) With Enhanced Operational Stability Choi, Junhwan; Lee, Chungyeol; Kang, Juyeon; Lee, Chang Hyeon; Lee, Seungmin; Oh, Jungyeop; Choi, Sung-Yool; et al, SMALL, v.18, no.39, 2022-09 |
| Dependence of hydrogen and oxygen incorporation on deposition parameters in photochemical vapor deposited mercury free silicon nitride films Sahu, BS; Srivastava, P; Agnihotri, OP; Lee, Hee Chul; Sekhar, BR; Mahapatra, S, THIN SOLID FILMS, v.446, pp.23 - 28, 2004-01 |
| Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film Kim, Hyo Kyeom; Jung, Hyung-Suk; Jang, Jae Hyuck; Park, Jinho; Park, Tae Joo; Lee, Seok-Hee; Hwang, Cheol Seong, JOURNAL OF APPLIED PHYSICS, v.110, no.11, 2011-12 |
| Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.28, no.17, 2017-04 |
| Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2 Yeo, CC; Joo, MS; Cho, Byung Jin; Whang, SJ, THIN SOLID FILMS, v.462, pp.90 - 95, 2004-09 |
| Enhanced performance in graphene RF transistors via advanced process integration Hong, Seul Ki; Oh, Joong Gun; Hwang, Wan Sik; Cho, Byung-Jin, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.32, no.4, 2017-04 |
| Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3 Park, Pan Kwi; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.89, no.19, 2006-11 |
| Facile synthesis of AlOx dielectrics via mist-CVD based on aqueous solutions Oh, Keun-Tae; Kim, Hyo-Yeon; Kim, Dong-Hyun; Han, Jeong Hwan; Park, Jozeph; Park, Jin-Seong, CERAMICS INTERNATIONAL, v.43, no.12, pp.8932 - 8937, 2017-08 |
| Fast and slow transient charging of Oxide Semiconductor Transistors Kim, Taeho; Park, Sungho; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-09 |
| Fast transient charging behavior of HfInZnO thin-film transistor Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.107, no.9, 2015-08 |
| Heavily Crosslinked, High-k Ultrathin Polymer Dielectrics for Flexible, Low-Power Organic Thin-Film Transistors (OTFTs) Choi, Junhwan; Kang, Juyeon; Lee, ChangHyeon; Jeong, Kihoon; Im, Sung Gap, ADVANCED ELECTRONIC MATERIALS, v.6, no.8, pp.2000314, 2020-07 |
| High to ultra-high power electrical energy storage Sherrill, Stefanie A.; Banerjee, Parag; Rubloff, Gary W.; Lee, Sang Bok, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.13, no.46, pp.20714 - 20723, 2011 |
| Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application Hasan, Musarrat; Yun, Sun Jin; Koo, Jae Bon; Park, Sang Hee Ko; Kim, Yong Hae; Kang, Seung Youl; Rho, Jonghyun; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.3, pp.80 - 82, 2010 |
| Impact of fast transient charging and ambient on mobility of WS2 field-effect transistor Park, Junghak; Woo, Hyunsuk; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.35, no.5, 2017-09 |
| Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor Kim, Taeho; Choi, Rino; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.38, no.2, pp.203 - 206, 2017-02 |
| Large-scale organic nanowire lithography and electronics Min, Sung-Yong; Kim, Tae-Sik; Kim, Beom Joon; Cho, Himchan; Noh, Yong-Young; Yang, Hoichang; Cho, Jeong Ho; et al, NATURE COMMUNICATIONS, v.4, 2013-04 |
| Large-Scale, Low-Power Nonvolatile Memory Based on Few-Layer MoS2 and Ultrathin Polymer Dielectrics Yang, Sang Cheol; Choi, Junhwan; Jang, Byung Chul; Hong, Woonggi; Shim, Gi Woong; Yang, Sang Yoon; Im, Sung Gap; et al, ADVANCED ELECTRONIC MATERIALS, v.5, no.5, pp.1800688, 2019-05 |
| Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4 Noh, Hyeon-Kyun; Ryu, Byungki; Choi, Eun-Ae; Bang, Junhyeok; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.95, no.8, pp.082905 - 082905, 2009-08 |
| Low-Power, Flexible Nonvolatile Organic Transistor Memory Based on an Ultrathin Bilayer Dielectric Stack Pak, Kwanyong; Choi, Junhwan; Lee, Changhyeon; Im, Sung Gap, ADVANCED ELECTRONIC MATERIALS, v.5, no.4, pp.1800799, 2019-04 |
| Microsecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor Woo, Hyunsuk; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-08 |
| Photo-Curable Sol-Gel Hybrid Film as a Dielectric Layer by a Thiol-ene Reaction in Air or N-2 for Organic Thin Film Transistors Kim, Joon-Soo; Lee, Seung-Won; Hwang, Young-Hwan; Kim, Yong-Ho; Yoo, Seung-Hyup; Bae, Byeong-Soo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.5, pp.G13 - G15, 2012-02 |
| Process and material properties of HfLaO(x) prepared by atomic layer deposition He, Wei; Chan, Daniel S. H.; Kim, Sun-Jung; Kim, Young-Sun; Kim, Sung-Tae; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G189 - G193, 2008-08 |
| Profile Evolution for Conformal Atomic Layer Deposition over Nanotopography Cleveland E.R.; Banerjee P.; Perez I.; Lee, Sang Bok; Rubloff G.W., ACS NANO, v.4, no.8, pp.4637 - 4644, 2010 |
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 |
| Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.17, 2018-04 |
| Reliability issues and role of defects in high-k dielectric HfO2 devices Kang, JG; Kim, DY; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.552 - 557, 2007-03 |
| Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High-k Polymer Dielectric for Extremely Stable Organic Thin-Film Transistor Operation Choi, Junhwan; Yoon, Jongsun; Kim, Min Ju; Pak, Kwanyong; Lee, Changhyeon; Lee, Haechang; Jeong, Kihoon; et al, ACS APPLIED MATERIALS & INTERFACES, v.11, no.32, pp.29113 - 29123, 2019-07 |
| Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation Ang, CH; Tan, SS; Lek, CM; Lin, W; Zheng, ZJ; Chen, T; Cho, Byung Jin, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.4, pp.26 - 28, 2002-04 |
| Surface reaction mechanisms for atomic layer deposition of silicon nitride Mui, C; Widjaja, Y; Kang, Jeung Ku; Musgrave, CB, SURFACE SCIENCE, v.557, no.1-3, pp.159 - 170, 2004-05 |
| Switching of Photonic Crystal Lasers by Graphene Hwang, Min-Soo; Kim, Ha-Reem; Kim, Kyoung-Ho; Jeong, Kwang-Yong; Park, Jin-Sung; Choi, Jae-Hyuck; Kang, Ju-Hyung; et al, NANO LETTERS, v.17, no.3, pp.1892 - 1898, 2017-03 |
| Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; et al, NATURE MATERIALS, v.14, no.6, pp.628 - 635, 2015-06 |
| The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5, 2016-05 |
| Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si Yu, HY; Wu, N; Li, MF; Zhu, CX; Cho, Byung Jin; Kwong, DL; Tung, CH; et al, APPLIED PHYSICS LETTERS, v.81, no.19, pp.3618 - 3620, 2002-11 |
| Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors Lee, Sung Won; Shin, Minkwan; Park, Jae Yoon; Kim, Bong Soo; Tu, Deyu; Jeon, Sanghun; Jeong, Unyong, SCIENCE OF ADVANCED MATERIALS, v.7, no.5, pp.874 - 880, 2015-05 |
| Ultrathin ZrOx-Organic Hybrid Dielectric (EOT 3.2 nm) via Initiated Chemical Vapor Deposition for High-Performance Flexible Electronics Kim, Min Ju; Pak, Kwanyong; Choi, Junhwan; Lee, Tae In; Hwang, Wan Sik; Im, Sung Gap; Cho, Byung-Jin, ACS APPLIED MATERIALS & INTERFACES, v.11, no.47, pp.44513 - 44520, 2019-11 |
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