Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application

Abstract

The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200 degrees C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm(2)/V s, with a high on/off ratio and an off current of as low as < 10(11) A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius < 4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications.