DSpace at KOASAS

Researcher Page

사진
Park, Sang-Hee Ko (박상희)
교수, Department of Materials Science & Engineering(신소재공학과)

http://ssmd.kaist.ac.kr

Research Area
THIN FILM TRANSISTOR, SENSOR, MEMRISTOR DEVICE
Co-researchers
    Similar researchers

    Keyword Cloud

    Reload 더보기
    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    Suppressing channel-shortening effect of self-aligned coplanar Al-doped In-Sn-Zn-O TFTs using Mo-Al alloy source/drain electrode as Cu diffusion barrier

    Jeong, Wooseok; Winkler, Joerg; Schmidt, Hennrik; et al, JOURNAL OF ALLOYS AND COMPOUNDS, v.859, 2021-04

    2
    Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiOx/Active Interface

    Jeon, Guk-Jin; Yang, Junghoon; Lee, Seung Hee; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.363 - 366, 2021-03

    3
    Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO2 Electrode

    Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Koresearcher; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.8, pp.3431 - 3434, 2020-08

    4
    Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

    Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Koresearcher; et al, NANOSCALE, v.12, no.16, pp.9024 - 9031, 2020-04

    5
    Solution-Processed, Photo-Patternable Fluorinated Sol-Gel Hybrid Materials as a Bio-Fluidic Barrier for Flexible Electronic Systems

    Lee, Injun; Kim, Yong Ho; Jang, Jinhyeong; et al, ADVANCED ELECTRONIC MATERIALS, v.6, no.3, pp.1901065, 2020-03

    6
    Effect of High Film Stress of Mo Source and Drain Electrodes on Electrical Characteristics of Al Doped InZnSnO TFTs

    Bae, Jaehan; Ma, Boo Soo; Jeon, Gukjin; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1760 - 1763, 2019-11

    7
    Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

    Ko, Jong Beom; Lee, Seung-Hee; Park, Kyung Woo; et al, RSC ADVANCES, v.9, no.62, pp.36293 - 36300, 2019-11

    8
    Effects of Hydroxyl Group in AlOx Gate Insulator on the Negative Bias Illumination Instability of In-Ga-Zn-O Thin Film Transistors

    Park, Kyoung Woo; Jeon, Gukjin; Lee, Seunghee; et al, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.216, no.6, 2019-03

    9
    Highly Sensitive Active-Matrix Driven Self-Capacitive Fingerprint Sensor based on Oxide Thin Film Transistor

    Jeon, Guk-Jin; Lee, Seung-Hwan; Lee, Seung Hee; et al, SCIENTIFIC REPORTS, v.9, 2019-03

    10
    High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature

    Park, Kyoung Woo; Lee, Seunghee; Lee, Hyunkoo; et al, RSC ADVANCES, v.9, no.1, pp.58 - 64, 2019-01

    11
    Inorganic Polymer Micropillar-Based Solution Shearing of Large-Area Organic Semiconductor Thin Films with Pillar-Size-Dependent Crystal Size

    Kim, Jin-Oh; Lee, Jeong-Chan; Kim, Min-Ji; et al, ADVANCED MATERIALS, v.30, no.29, 2018-07

    12
    Inorganic polymer micropillar-based solution-shearing of large-area organic semiconductor thin-film with pillar size dependent crystal size

    Kim, Jin-Oh; Lee, Jeong-Chan; Kim, Min-Ji; et al, ADVANCED MATERIALS, v.30, no.29, 2018-07

    13
    Metal Nanoparticle Array as a Tunable Refractive Index Material over Broad Visible and Infrared Wavelengths

    Kim, Reehyang; Chung, Kyungjae; Kim, Ju Young; et al, ACS PHOTONICS, v.5, no.4, pp.1188 - 1195, 2018-04

    14
    Memristive Logic-in-Memory Integrated Circuits for Energy-Efficient Flexible Electronics

    Jang, Byung Chul; Nam, Yunyong; Koo, Beom Jun; et al, ADVANCED FUNCTIONAL MATERIALS, v.28, no.2, pp.1704725, 2018-01

    15
    Effect of hydrogen diffusion in an In-Ga-Zn-O thin film transistor with an aluminum oxide gate insulator on its electrical properties

    Nam, Yunyong; Kim, Hee-Ok; Cho, Sung Haeng; et al, RSC ADVANCES, v.8, no.10, pp.5622 - 5628, 2018-01

    16
    Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2O3/SiNx Gate Insulator

    Kim, Yujin; Lee, Kwang Heum; Mun, Geumbi; et al, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.214, no.12, 2017-12

    17
    Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al<inf>2</inf>O<inf>3</inf>/SiN<inf>x</inf>Gate Insulator

    Kim Y.; Lee K.-H.; Mun G.; et al, Physica Status Solidi (A) Applications and Materials Science, v.214, no.12, 2017-12

    18
    Investigation on the Hump Effect Utilizing the Capacitance Voltage Characteristics of a-InGaZnO Thin Film Transistor

    Kim, Dong-Uk; Park, Sang-Hee Koresearcher; Choe, Heehwan; et al, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.11, pp.8545 - 8548, 2017-11

    19
    Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter

    Goh, Youngin; Ahn, Jaehan; Lee, Jeong Rak; et al, ACS APPLIED MATERIALS & INTERFACES, v.9, no.42, pp.36962 - 36970, 2017-10

    20
    Electro-Thermal Annealing Method for Recovery of Cyclic Bending Stress in Flexible a-IGZO TFTs

    Lee, Myung Keun; Kim, Choong-Ki; Park, Jeong Woo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3189 - 3192, 2017-08
    Load more items
    Loading...

    rss_1.0 rss_2.0 atom_1.0