Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor

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Amorphous InHfZnO (a-IHZO) thin-film devices have attracted considerable attention owing to their highmobility. However, themobility of a-IHZO thin-film transistors has not been correctly determined, because it is affected by fast charging. In this letter, we investigated the effect of transient charging on the mobility. On the basis of the pulse IDS-VGS method, we present an approach to estimate a correction factor for the measured apparent mobility, which was extracted from pulse amplitude versus threshold voltage shift.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2017-02
Language
English
Article Type
Article
Keywords

ELECTRON-TRAPPING CHARACTERIZATION; AMORPHOUS OXIDE SEMICONDUCTORS; V-G METHODOLOGY; GATE DIELECTRICS; TRANSPARENT; PERFORMANCE

Citation

IEEE ELECTRON DEVICE LETTERS, v.38, no.2, pp.203 - 206

ISSN
0741-3106
DOI
10.1109/LED.2016.2638965
URI
http://hdl.handle.net/10203/240754
Appears in Collection
EE-Journal Papers(저널논문)
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