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Jeon, Sanghun (전상훈)
부교수, School of Electrical Engineering(전기및전자공학부)
Research Area
Semiconductor Process, Semiconductor Materials, Semiconductor Sensor
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors

    Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp.1996 - 2002, 2021-04

    2
    Low-Temperature Growth of Ferroelectric Hf0.5Zr0.5O2 Thin Films Assisted by Deep Ultraviolet Light Irradiation

    Joh, Hyunjin; Anoop, Gopinathan; Lee, Won-June; et al, ACS APPLIED ELECTRONIC MATERIALS, v.3, no.3, pp.1244 - 1251, 2021-03

    3
    Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfxZr1-xO2 Capacitors

    Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghunresearcher, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.331 - 334, 2021-03

    4
    Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices

    Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.841 - 845, 2021-02

    5
    The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia

    Lee, Yongsun; Goh, Youngin; Hwang, Junghyeon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.523 - 528, 2021-02

    6
    Effect of Ga composition on mobility in a-InGaZnO thin-film transistors

    Ahn, Minho; Gaddam, Venkateswarlu; Park, Sungho; et al, NANOTECHNOLOGY, v.32, no.9, 2021-02

    7
    Interfacial Dipole Modulation Device With SiOX Switching Species

    Kim, Giuk; Kim, Taeho; Jeon, Sanghunresearcher, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp.57 - 60, 2021

    8
    Metal-induced n(+)/n homojunction for ultrahigh electron mobility transistors

    Park, Ji-Min; Kim, Hyoung-Do; Joh, Hongrae; et al, NPG ASIA MATERIALS, v.12, no.1, pp.81, 2020-12

    9
    Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering

    Goh, Youngin; Hwang, Junghyeon; Jeon, Sanghunresearcher, ACS APPLIED MATERIALS & INTERFACES, v.12, no.51, pp.57539 - 57546, 2020-12

    10
    Metallic Glass-Based Dual-Mode Sensor for Soft Electronics

    Jung, Minhyun; Yun, Changjin; Kim, Mingu; et al, IEEE SENSORS JOURNAL, v.20, no.20, pp.12396 - 12401, 2020-10

    11
    Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

    Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghunresearcher, IEEE ELECTRON DEVICE LETTERS, v.41, no.8, pp.1193 - 1196, 2020-08

    12
    Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO2 Electrode

    Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Koresearcher; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.8, pp.3431 - 3434, 2020-08

    13
    High-k HfxZr1-xO2 Ferroelectric Insulator by Utilizing High Pressure Anneal

    Das, Dipjyoti; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.6, pp.2489 - 2494, 2020-06

    14
    Flexible multimodal sensor inspired by human skin based on hair-type flow, temperature, and pressure

    Jung, Minhyun; Lee, Jumi; Vishwanath, Sujaya Kumar; et al, FLEXIBLE AND PRINTED ELECTRONICS, v.5, no.2, 2020-06

    15
    Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

    Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Koresearcher; et al, NANOSCALE, v.12, no.16, pp.9024 - 9031, 2020-04

    16
    Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing

    Woo, Jiyong; Goh, Youngin; Im, Solyee; et al, IEEE ELECTRON DEVICE LETTERS, v.41, no.2, pp.232 - 235, 2020-02

    17
    Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

    Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.745 - 750, 2020-02

    18
    Demonstration of High Ferroelectricity (P-r similar to 29 mu C/cm(2)) in Zr Rich HfxZr1-xO2 Films

    Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghunresearcher, IEEE ELECTRON DEVICE LETTERS, v.41, no.1, pp.34 - 37, 2020-01

    19
    Evolution of crystallographic structure and ferroelectricity of Hf0.5Zr0.5O2 films with different deposition rate

    Kim, Taeho; An, Minho; Jeon, Sanghunresearcher, AIP ADVANCES, v.10, no.1, 2020-01

    20
    Broad spectral responsivity in highly photoconductive InZnO/MoS2 heterojunction phototransistor with ultrathin transparent metal electrode

    Das, Dipjyoti; Park, Junghak; Ahn, Minho; et al, NANOTECHNOLOGY, v.31, no.3, 2020-01

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