Researcher Page

Jeon, Sanghun (전상훈)
교수, (전기및전자공학부)
Research Area
Semiconductor Process, Semiconductor Materials, Semiconductor Sensor
    Similar researchers

    Keyword Cloud

    Reload 더보기
    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications

    Kim, Taeho; Kim, Giuk; Lee, Young Kyu; et al, ADVANCED FUNCTIONAL MATERIALS, v.33, no.7, 2023-02

    Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors

    Kim, Giuk; Ko, Dong Han; Kim, Taeho; et al, ACS APPLIED MATERIALS & INTERFACES, v.15, no.1, pp.1463 - 1474, 2023-01

    Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors

    Lee, Sangho; Lee, Youngkyu; Kim, Giuk; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.349 - 353, 2023-01

    Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices

    Jeong, Yeongseok; Gaddam, Venkateswarlu; Goh, Youngin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.354 - 359, 2023-01

    Steep-Slope Transistor with an Imprinted Antiferroelectric Film

    Lee, Sangho; Lee, Yongsun; Kim, Taeho; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.47, pp.53019 - 53026, 2022-11

    A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology

    Jung, Minhyun; Gaddam, Venkateswarlu; Jeon, Sanghunresearcher, NANO CONVERGENCE, v.9, no.1, 2022-10

    Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory

    Lee, Sangho; Kim, Giuk; Kim, Taeho; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.10, 2022-10

    Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

    Gaddam, Venkateswarlu; Kim, Giuk; Kim, Taeho; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43463 - 43473, 2022-09

    Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory Technology

    Hwang, Junghyeon; Lim, Sehee; Kim, Giuk; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.7, pp.1049 - 1052, 2022-07

    High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

    Kim, Giuk; Lee, Sangho; Eom, Taehyong; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.10, no.26, pp.9802 - 9812, 2022-07

    Effects of iCVD organic passivation in oxide thin-film transistors under repetitive bending stress for electrical and mechanical stability

    Jung, Taeseung; Jeon, Sanghunresearcher, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.40, no.4, 2022-07

    Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process

    Hwang, Junghyeon; Kim, Minki; Jung, Minhyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.6, pp.3439 - 3445, 2022-06

    Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process

    Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01

    Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing

    Joh, Hongrae; Jung, Minhyun; Hwang, Junghyeon; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.1, pp.1326 - 1333, 2022-01

    Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays

    Goh, Youngin; Hwang, Junghyeon; Kim, Minki; et al, ACS APPLIED MATERIALS & INTERFACES, v.13, no.49, pp.59422 - 59430, 2021-12

    Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier

    Kim, Minki; Goh, Youngin; Hwang, Junghyeon; et al, APPLIED PHYSICS LETTERS, v.119, no.26, 2021-12

    Oxide electronics: Translating materials science from lab-to-fab

    Nathan, Arokia; Jeon, Sanghunresearcher, MRS BULLETIN, v.46, no.11, pp.1028 - 1036, 2021-11

    Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors

    Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghunresearcher, JOURNAL OF APPLIED PHYSICS, v.129, no.24, 2021-06

    Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 degrees C) Annealing Process

    Gaddam, Venkateswarlu; Das, Dipjyoti; Jung, Taeseung; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.812 - 815, 2021-06

    Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer

    Joh, Hongrae; Jung, Taeseung; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2538 - 2542, 2021-05

    Load more items

    rss_1.0 rss_2.0 atom_1.0