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Jeon, Sanghun (전상훈)
교수, (전기및전자공학부)
Research Area
Semiconductor Process, Semiconductor Materials, Semiconductor Sensor
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications

    Kim, Taeho; Kim, Giuk; Lee, Young Kyu; et al, ADVANCED FUNCTIONAL MATERIALS, v.33, no.7, 2023-02

    2
    Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors

    Kim, Giuk; Ko, Dong Han; Kim, Taeho; et al, ACS APPLIED MATERIALS & INTERFACES, v.15, no.1, pp.1463 - 1474, 2023-01

    3
    Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors

    Lee, Sangho; Lee, Youngkyu; Kim, Giuk; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.349 - 353, 2023-01

    4
    Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices

    Jeong, Yeongseok; Gaddam, Venkateswarlu; Goh, Youngin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.354 - 359, 2023-01

    5
    Steep-Slope Transistor with an Imprinted Antiferroelectric Film

    Lee, Sangho; Lee, Yongsun; Kim, Taeho; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.47, pp.53019 - 53026, 2022-11

    6
    A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology

    Jung, Minhyun; Gaddam, Venkateswarlu; Jeon, Sanghunresearcher, NANO CONVERGENCE, v.9, no.1, 2022-10

    7
    Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory

    Lee, Sangho; Kim, Giuk; Kim, Taeho; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.10, 2022-10

    8
    Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

    Gaddam, Venkateswarlu; Kim, Giuk; Kim, Taeho; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43463 - 43473, 2022-09

    9
    Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory Technology

    Hwang, Junghyeon; Lim, Sehee; Kim, Giuk; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.7, pp.1049 - 1052, 2022-07

    10
    High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

    Kim, Giuk; Lee, Sangho; Eom, Taehyong; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.10, no.26, pp.9802 - 9812, 2022-07

    11
    Effects of iCVD organic passivation in oxide thin-film transistors under repetitive bending stress for electrical and mechanical stability

    Jung, Taeseung; Jeon, Sanghunresearcher, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.40, no.4, 2022-07

    12
    Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process

    Hwang, Junghyeon; Kim, Minki; Jung, Minhyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.6, pp.3439 - 3445, 2022-06

    13
    Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process

    Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01

    14
    Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing

    Joh, Hongrae; Jung, Minhyun; Hwang, Junghyeon; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.1, pp.1326 - 1333, 2022-01

    15
    Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays

    Goh, Youngin; Hwang, Junghyeon; Kim, Minki; et al, ACS APPLIED MATERIALS & INTERFACES, v.13, no.49, pp.59422 - 59430, 2021-12

    16
    Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier

    Kim, Minki; Goh, Youngin; Hwang, Junghyeon; et al, APPLIED PHYSICS LETTERS, v.119, no.26, 2021-12

    17
    Oxide electronics: Translating materials science from lab-to-fab

    Nathan, Arokia; Jeon, Sanghunresearcher, MRS BULLETIN, v.46, no.11, pp.1028 - 1036, 2021-11

    18
    Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors

    Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghunresearcher, JOURNAL OF APPLIED PHYSICS, v.129, no.24, 2021-06

    19
    Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 degrees C) Annealing Process

    Gaddam, Venkateswarlu; Das, Dipjyoti; Jung, Taeseung; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.812 - 815, 2021-06

    20
    Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer

    Joh, Hongrae; Jung, Taeseung; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2538 - 2542, 2021-05
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