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| A nano-structure memory with SOI edge channel Park, G; Han, S; Hwang, T; Shin, Hyung-Cheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S1003 - S1006, 1999-12 |
| A Nano-Structure Memory with SOI Edge Channel and a Nano Dot geunsook park; sangyeon han; taekeun hwang; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.12B, pp.7190 - 7192, 1998-12 |
| A New self-Aligned Offset Staggered Polysilicon Thin Film Transistor jung-in han; gi-young yang; chul-hi han, IEEE ELECTRON DEVICE LETTERS, v.20, no.8, pp.381 - 383, 1999-08 |
| A novel, selective, and extremely responsive thienyl-based dual fluorogenic probe for tandem superoxide and Hg2+ chemosensing Singh, Atul P.; Murale, Dhiraj P.; Ha, Yong-Hwang; Liew, Hyun-Jeong; Lee, Kang-Mun; Segev, Aviv; Suh, Yoo-Hun; et al, DALTON TRANSACTIONS, v.42, no.10, pp.3285 - 3290, 2013-03 |
A SONOS device with a separated charge trapping layer for improvement of charge injection Ahn, Jae-Hyuk; Moon, Dong-Il; Ko, Seung-Won; Kim, Chang-Hoon; Kim, Jee-Yeon; Kim, Moon-Seok; Seol, Myeong-Lok; et al, AIP ADVANCES, v.7, no.3, 2017-03 |
| Adhesion improvement of graphene/copper interface using UV/ozone treatments Seo, Jeongmin; Chang, Won Seok; Kim, Taek-Soo, THIN SOLID FILMS, v.584, pp.170 - 175, 2015-06 |
| Aligned Circular-Type Nanowire Transistors Grown on Multilayer Graphene Film Kim, Hwansoo; Choi, Hongkyw; Choi, Sung-Yool; Ju, Sanghyun, JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.45, pp.22163 - 22167, 2011-11 |
| An Optically Assisted Program Method for Capacitorless 1T-DRAM Moon, Dong-Il; Choi, Sung-Jin; Han, Jin-Woo; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.7, pp.1714 - 1718, 2010-07 |
| Analysis of Transconductance (g(m)) in Schottky-Barrier MOSFETs Choi, Sung-Jin; Choi, Chel-Jong; Kim, Jee-Yeon; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.2, pp.427 - 432, 2011-02 |
| Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors Jang, M; Oh, Jihun; Maeng, S; Cho, W; Lee, S; Kang, K; Park, K, APPLIED PHYSICS LETTERS, v.83, no.13, pp.2611 - 2613, 2003-09 |
| Characterization of dual layer phoswich detector performance for small animal PET using Monte Carlo simulation Chung, YH; Choi, Y; Cho, Gyuseong; Choe, YS; Lee, KH; Kim, BT, PHYSICS IN MEDICINE AND BIOLOGY, v.49, no.13, pp.2881 - 2890, 2004-07 |
| Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET Lee, Seung-Wook; Bang, Tewook; Kim, Choong-Ki; Hwang, Kyu-Man; Jang, Byung Chul; Moon, Dong-Il; Bae, Hagyoul; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.8, pp.1008 - 1011, 2017-08 |
| Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application Ryu, Seong-Wan; Lee, Jong-Won; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.3, pp.377 - 382, 2009-03 |
| Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors Shin, Mincheol, APPLIED PHYSICS LETTERS, v.97, no.9, pp.092108, 2010-08 |
| Effect of High Film Stress of Mo Source and Drain Electrodes on Electrical Characteristics of Al Doped InZnSnO TFTs Bae, Jaehan; Ma, Boo Soo; Jeon, Gukjin; Jeong, Wooseok; Je, Chang Han; Kim, Taek-Soo; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1760 - 1763, 2019-11 |
| Electron mobility enhancement using ultrathin pure Ge on Si substrate Yeo, CC; Cho, Byung Jin; Gao, E; Lee, SJ; Lee, AH; Yu, CY; Liu, CW; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.10, pp.761 - 763, 2005-10 |
| Evaluation of radiation dose to organs during kilovoltage cone-beam computed tomography using Monte Carlo simulation Son, Kihong; Cho, Seungryong; Kim, Jin Sung; Han, Youngyih; Ju, Sang Gyu; Choi, Doo Ho, JOURNAL OF APPLIED CLINICAL MEDICAL PHYSICS, v.15, no.2, pp.295 - 302, 2014 |
| Experimental analysis of multi-lambda injection locking in single mode Fabry-Perot laser diode Nakarmi, Bikash; Zhang, Xuping; Won, Yong Hyub, OPTICS COMMUNICATIONS, v.358, pp.24 - 29, 2015-09 |
| Experimental demonstration of a programmable quantum computer by NMR Kim, JH; Lee, JS; Hwang, TS; Lee, Soonchil, JOURNAL OF MAGNETIC RESONANCE, v.166, pp.35 - 38, 2004-01 |
| Extremely scaled silicon nano-CMOS devices Chang, LL; Choi, Yang-Kyu; Ha, DW; Ranade, P; Xiong, SY; Bokor, J; Hu, CM; et al, PROCEEDINGS OF THE IEEE, v.91, no.11, pp.1860 - 1873, 2003-11 |
| Formation mechanism of ZnSiO(3) nanoparticles embedded in an amorphous interfacial layer between a ZnO thin film and an n-Si (001) substrate due to thermal treatment Yuk, Jong Min; Lee, Jeong-Yong; Jung, J. H.; Lee, D. U.; Kim, T. W.; Son, D. I.; Choi, W. K., JOURNAL OF APPLIED PHYSICS, v.103, no.8, 2008-04 |
| Functionalized Graphene as an Ultrathin Seed Layer for the Atomic Layer Deposition of Conformal High-k Dielectrics on Graphene Shin, Woocheol; Bong, Jae Hoon; Choi, Sung-Yool; Cho, Byung Jin, ACS APPLIED MATERIALS INTERFACES, v.5, no.22, pp.11515 - 11519, 2013-11 |
| Graphene-based photonic devices for soft hybrid optoelectronic systems Kim, Jin Tae; Kim, Jaehyeon; Choi, Hongkyw; Choi, Choon-Gi; Choi, Sung-Yool, NANOTECHNOLOGY, v.23, no.34, 2012-08 |
| Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors Song, Seung-Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung-Jin, SCIENTIFIC REPORTS, v.6, 2016-05 |
| Improved morphological stability of CoSi2 layer by in situ growth on polycrystalline silicon using reactive chemical vapor deposition Lee, HS; Rhee, HS; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.1, pp.16 - 20, 2002-01 |
| Improvement in thermal stability of chemical vapor deposition CoSi 2/polycrystalline silicon using tin and amorphous silicon interlayers Hong J.E.; Kim S.I.; Ahn, Byung Tae; Lee H.S., JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS , v.45, no.2 A, pp.710 - 713, 2006-02 |
| Interactions of PANs C-termini with archaeal 20S proteasome and implications for the eukaryotic proteasome-ATPase interactions Yu, Yadong; Smith, David M.; Kim, Ho Min; Rodriguez, Victor; Goldberg, Alfred L.; Cheng, Yifan, EMBO JOURNAL, v.29, no.3, pp.692 - 702, 2010-02 |
| Investigation of Leaky Characteristic in a Single-Transistor-Based Leaky Integrate-and-Fire Neuron Han, Joon-Kyu; Kim, Myung-Su; Kim, Seung-Il; Lee, Mun-Woo; Lee, Sang-Won; Yu, Ji-Man; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.11, pp.5912 - 5915, 2021-11 |
| Low Voltage Operating Field Effect Transistors with Composite In2O3-ZnO-ZnGa2O4 Nanofiber Network as Active Channel Layer Choi, Seung-Hoon; Jang, Bong-Hoon; Park, Jin-Seong; Demadrille, Renaud; Tuller, Harry L.; Kim, Il-Doo, ACS NANO, v.8, no.3, pp.2318 - 2327, 2014-03 |
| Mechanical Stability Analysis via Neutral Mechanical Plane for High-Performance Flexible Si Nanomembrane FDSOI Device Kim, Seung-Yoon; Bong, Jae Hoon; Kim, Cheolgyu; Hwang, Wan Sik; Kim, Taek-Soo; Cho, Byung Jin, ADVANCED MATERIALS INTERFACES, v.4, no.21, 2017-11 |
| MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2 Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09 |
| Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process Kim, TW; Choo, DC; Shim, JH; Jung, M; Kang, SO; Lee, HS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.79, no.1, pp.120 - 122, 2001-07 |
| Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications Jeon, Sanghun; Park, Sungho; Song, Ihun; Hur, Ji-Hyun; Park, Jaechul; Kim, Hojung; Kim, Sunil; et al, ACS APPLIED MATERIALS & INTERFACES, v.3, no.1, pp.1 - 6, 2011-01 |
| Nanowire FET Biosensors on a Bulk Silicon Substrate Ahn, Jae-Hyuk; Kim, Jee-Yeon; Choi, Kyung-Yong; Moon, Dong-Il; Kim, Chang-Hoon; Seol, Myeong-Lok; Park, Tae-Jung; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.8, pp.2243 - 2249, 2012-08 |
| Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory Technology Hwang, Junghyeon; Lim, Sehee; Kim, Giuk; Jung, Seong-Ook; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.43, no.7, pp.1049 - 1052, 2022-07 |
| Off-state leakage in MOSFET considering source/drain extension regions Hur, Jae; Jeong, Woo Jin; Shin, Mincheol; Choi, Yang-Kyu, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.36, no.8, pp.085018, 2021-08 |
| One Biristor-Two Transistor (1B2T) Neuron With Reduced Output Voltage and Pulsewidth for Energy-Efficient Neuromorphic Hardware Han, Joon-Kyu; Yun, Gyeong-Jun; Han, Seong-Joo; Yu, Ji-Man; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.1, pp.430 - 433, 2021-01 |
| p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices Choi, Won Chul; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43, 2014-01 |
| Performance Assessment of III-V Channel Ultra-Thin-Body Schottky-Barrier MOSFETs Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.726 - 728, 2014-07 |
| Quantum Computing Systems: A Brief Overview Anukool, Waranont; Lim, Jongseok; Song, Yunheung; Ahn, Jaewook, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.73, no.6, pp.841 - 845, 2018-09 |
| Reconfiguration of the proteasome during chaperone-mediated assembly Park, Soyeon; Li, Xueming; Kim, Ho Min; Singh, Chingakham Ranjit; Tian, Geng; Hoyt, Martin A.; Lovell, Scott; et al, NATURE, v.497, no.7450, pp.512 - 516, 2013-05 |
| Relaxation of the Si lattice strain in the Si(001)-SiO2 interface by annealing in N2O Ha, YH; Kim, Sehun; Lee, SY; Kim, JH; Baek, DH; Kim, HK; Moon, DW, APPLIED PHYSICS LETTERS, v.74, no.23, pp.3510 - 3512, 1999-06 |
| Resistance analysis and device design guideline for graphene RF transistors Hong, Seul Ki; Jeon, Sang Chul; Hwang, Wan Sik; Cho, Byung Jin, 2D MATERIALS, v.2, no.3, 2015-07 |
| SCALING THE SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR INTO THE 0.1-MU-M REGIME USING VERTICAL DOPING ENGINEERING YAN, RH; OURMAZD, A; LEE, KF; Jeon, DukYoung; PINTO, MR, APPLIED PHYSICS LETTERS, v.59, no.25, pp.3315 - 3317, 1991-12 |
| Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETs Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.34, no.3, pp.342 - 344, 2013-03 |
| Spin wave nonreciprocity for logic device applications Jamali, Mahdi; Kwon, Jae Hyun; Seo, Soo-Man; Lee, Kyung-Jin; Yang, Hyunsoo, SCIENTIFIC REPORTS, v.3, 2013-11 |
| Stateful In‐Memory Logic System and Its Practical Implementation in a TaOx‐Based Bipolar‐Type Memristive Crossbar Array Kim, Young Seok; Son, Myeong Won; Song, Hanchan; Park, Juseong; An, Jangho; Jeon, Jae Bum; Kim, Geun Young; et al, Advanced Intelligent Systems, v.2, no.3, pp.1900156, 2020-03 |
| Strong Two-Mode Parametric Interaction and Amplification in a Nanomechanical Resonator Cho, Sungwan; Cho, Sung Un; Jo, Myunglae; Suh, Junho; Park, Hee Chul; Kim, Sang Goon; Shim, Seung-Bo; et al, PHYSICAL REVIEW APPLIED, v.9, no.6, 2018-06 |
| Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor Lee, Dong-Il; Lee, Byung-Hyun; Yoon, Jinsu; Ahn, Dae-Chul; Park, Jun-Young; Hur, Jae; Kim, Myung-Su; et al, ACS NANO, v.10, no.12, pp.10894 - 10900, 2016-12 |
| Ultrafast Rabi flopping in a three-level energy ladder Lim, Jong-Seok; Lee, Kang-Hee; Ahn, Jae-Wook, OPTICS LETTERS, v.37, no.16, pp.3378 - 3380, 2012-08 |
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