Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory Technology

Abstract

We demonstrate that a non-volatile majority function logic is formed by a 1T-nC(storage)-1C(read) cell in which a hafnia ferroelectric capacitor is used for computing in memory (CiM) and nonvolatile logic-in-memory (NV-LiM). We show a write operation of low voltage (<3V) and high speed (<20ns), with improved endurance characteristics over 10(11) cycles by adopting a novel write and read method. We performed a circuit-level analysis of an NV 1bit full adder. This adder achieves a power-delay-area product that is 4.8 and 53.5 times higher than the previous FeFET-based 1bit full adder when approximate computing is excluded and applied, respectively.