Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

Abstract

The low-frequency noise (LFN) characteristics of a vertical pillar-type FET were investigated in order to observe the different influences of the source resistance (R-S) and the drain resistance (R-D). Because of its inherent vertical channel structure, the R-S and R-D are inevitablydifferent. To observe the effects of the asymmetric RS and RD on LFN, a forward mode (F-M) and reverse mode (RM) of voltage sweep were used. In the RM, the correlatedmobility fluctuation effect was higher and the power spectral density of resistance fluctuation (S-RSD) was lower than those in the FM. In addition, S-RSD was correlated with the R-S, but little with the R-D. To suppress S-RSD, it is important to minimize the R-S.