Showing results 1 to 8 of 8
Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED Cho, Doo-Hee; Park, Sang-Hee Ko; Byun, Chunwon; Ryu, Min Ki; Yang, Shinhyuk; Hwang, Chi-Sun; Yoon, Sung Min; et al, IEICE TRANSACTIONS ON ELECTRONICS, v.E92C, no.11, pp.1340 - 1346, 2009-11 |
Effects of Hydrogen on the PWSCC Initiation Behaviours of Alloy 182 Weld in PWR Environments 김호섭; 홍종대; Lee. J; Gokul. OS; 장창희, CORROSION SCIENCE AND TECHNOLOGY, v.14, no.3, pp.113 - 119, 2015-06 |
Evaluation of primary water stress corrosion cracking initiation behavior of Ni-base alloy 182 weld metal depending on water chemistry in a simulated primary water environment = 가압경수로 수화학 조건에 따른 Alloy 182 용접재의 일차수응력부식균열 개시 거동 평가link Kim, Ho-Sub; 김호섭; et al, 한국과학기술원, 2016 |
Plasma sputtering of silicon dioxide substrate by low energy Ar ion bombardment: molecular dynamics simulation Kim, DH; Lee, SY; Kim, DoHyun, JOURNAL OF CRYSTAL GROWTH, v.237, pp.217 - 222, 2002-04 |
Signal Integrity Analysis of Through-Silicon Via (TSV) With a Silicon Dioxide Well to Reduce Leakage Current for High-Bandwidth Memory Interface Kim, Hyunwoong; Lee, Seonghi; Park, Jongcheol; Shin, Yujun; Woo, Seongho; Kim, Jongwook; Cho, Jaeyong; et al, IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, v.13, no.5, pp.700 - 714, 2023-05 |
Synthesis of tungsten oxide nanostructures and electrochromic property of LB films = 텅스텐 산화물 나노 구조의 합성과 LB 박막의 전기변색 특성link Jung, Young-Hwa; 정영화; et al, 한국과학기술원, 2005 |
Three-Dimensional Integration Approach to High-Density Memory Devices Kim, Hojung; Jeon, Sanghun; Lee, Myoung-Jae; Park, Jaechul; Kang, Sangbeom; Choi, Hyun-Sik; Park, Churoo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.11, pp.3820 - 3828, 2011-11 |
전기화학적 환원 분석을 통한 Sn의 산화에 대한 연구 조성일; 유진; 강성권; Da-Yuan Shin, 마이크로전자 및 패키징학회지, v.11, no.3, pp.55 - 62, 2004-09 |
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