Browse "College of Engineering(공과대학)" by Author Hwang, Wan Sik

Showing results 1 to 60 of 71

1
A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric

Oh, Joong Gun; Pak, Kwanyong; Kim, Choong Sun; Bong, Jae Hoon; Hwang, Wan Sik; Im, Sung Gap; Cho, Byung-Jin, SMALL, v.14, no.9, pp.1703035, 2018-03

2
A quantitative strain analysis of a flexible single-crystalline silicon membrane

Bong, Jae Hoon; Kim, Cheolgyu; Hwang, Wan Sik; Kim, Taek-Soo; Cho, Byung Jin, APPLIED PHYSICS LETTERS, v.110, no.3, 2017-01

3
An 8-nm-thick Sn-doped polycrystalline beta-Ga2O3 MOSFET with a "normally off" operation

Yoon, Youngbin; Kim, Min Ju; Cho, Byung Jin; Shin, Myunghun; Hwang, Wan Sik, APPLIED PHYSICS LETTERS, v.119, no.12, 2021-09

4
Analysis of Fluorine Effects on Charge-Trap Flash Memory of W/TiN/Al2O3/Si3N4/SiO2/Poly-Si Gate Stack

Lee, Tae Yoon; Lee, Seung Hwan; Son, Jun Woo; Lee, Sang Jae; Bong, Jae Hoon; Shin, Eui Joong; Kim, Sung Ho; et al, SOLID-STATE ELECTRONICS, v.164, pp.107713, 2020-02

5
Analysis of Interface Trap States Generated by the Self-Heating Effect in Highly Flexible Single-Crystalline Si Nanomembrane Transistors

Bong, Jae Hoon; KIM, SEUNGYOON; Jeong, Chan Bae; Chang, Ki Soo; Hwang, Wan Sik; Cho, Byung-Jin, 48th IEEE Semiconductor Interface Specialists Conference, IEEE, 2017-12-06

6
Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

Hwang, Wan Sik; Remskar, Maja; Yan, Rusen; Kosel, Tom; Park, Jong Kyung; Cho, Byung Jin; Haensch, Wilfried; et al, APPLIED PHYSICS LETTERS, v.102, no.4, 2013-01

7
Comparison of Ga2O3 and TiO2 Nanostructures for Photocatalytic Degradation of Volatile Organic Compounds

Yoo, Tae Hee; Ryou, Heejoong; Lee, In Gyu; Cho, Junsang; Cho, Byung Jin; Hwang, Wan Sik, CATALYSTS, v.10, no.5, 2020-05

8
Compliment Graphene Oxide Coating on Silk Fiber Surface via Electrostatic Force for Capacitive Humidity Sensor Applications

Han, Kook In; Kim, Seungdu; Lee, In Gyu; Kim, Jong Pil; Kim, Jung-Ha; Hong, Suck Won; Cho, Byung Jin; et al, SENSORS, v.17, no.2, 2017-02

9
Conformal, Wafer-Scale and Controlled Nanoscale Doping of Semiconductors Via the iCVD Process

Kim, Jae Hwan; Park, Hongkeun; Pak, Kwanyong; Yoon, Alexander; Kim, Yun Sang; Im, Sung Gap; Hwang, Wan Sik; et al, 64th IEEE International Electron Devices Meeting (IEDM 2018), IEEE, 2018-12-04

10
Copolymer-Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process

Jeong, Jaejoong; Kim, Min Ju; Hwang, Wan Sik; Cho, Byung Jin, ADVANCED ELECTRONIC MATERIALS, v.7, no.10, pp.2100375, 2021-10

11
Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory

Kim, Seung-Yoon; Park, Jong-Kyung; Hwang, Wan Sik; Lee, Seung-Jun; Lee, Ki-Hong; Pyi, Seung Ho; Cho, Byung-Jin, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.5, pp.5044 - 5048, 2016-05

12
Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate

Lee, Sang Jae; Kim, Min Ju; Lee, Tae Yoon; Lee, Tae In; Bong, Jae Hoon; Shin, Sung Won; Kim, Seongho; et al, AIP ADVANCES, v.9, no.12, 2019-12

13
Effects of volatility of etch by-products on surface roughness during etching of metal gates in Cl-2

Hwang, Wan Sik; Cho, Byung Jin; Chan, Daniel S. H.; Lee, Sang Won; Yoo, Won Jong, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.1, pp.H6 - H10, 2008-01

14
Electric-field-cycling-induced phase transformation method to obtain morphotropic phase boundary in HfxZr1-xO2

Kim, Seung Ho; Cho, Byung-Jin; Lee, Seung Hwan; Hwang, Wan Sik; Park, Woo Young, E-MRS 2021 Fall Meeting, European Materials Research Society, 2021-09-20

15
Electrical and photocurrent properties of a polycrystalline Sn-doped beta-Ga2O3 thin film

Yoon, Youngbin; Kim, Sunjae; Lee, In Gyu; Cho, Byung Jin; Hwang, Wan Sik, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.121, 2021-01

16
Enhanced performance in graphene RF transistors via advanced process integration

Hong, Seul Ki; Oh, Joong Gun; Hwang, Wan Sik; Cho, Byung-Jin, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.32, no.4, 2017-04

17
Enhanced Photocatalytic Activity of Electrospun beta-Ga2O3 Nanofibers via In-Situ Si Doping Using Tetraethyl Orthosilicate

Yoo, Tae Hee; Ryou, Heejoong; Lee, In Gye; Cho, Byung-Jin; Hwang, Wan Sik, CATALYSTS, v.9, no.12, 2019-12

18
Enhanced Photocatalytic Degradation of 2-Butanone Using Hybrid Nanostructures of Gallium Oxide and Reduced Graphene Oxide Under Ultraviolet-C Irradiation

Bae, Hyun Jeong; Yoo, Tae Hee; Kim, Seungdu; Choi, Wonhyeok; Song, Yo Seung; Kwon, Do-Kyun; Cho, Byung-Jin; et al, CATALYSTS, v.9, no.5, 2019-05

19
Enhanced third harmonic generation in ultrathin free-standing beta-Ga2O3 nanomembranes: study on surface and bulk contribution

Yi, Gao; Jeon, Sangheon; Kwon, Young Woo; Park, Jongkyoon; Duy Anh Nguyen; Sandeep, C. S. Suchand; Hwang, Wan Sik; et al, NANOSCALE, v.14, no.1, pp.175 - 186, 2021-12

20
Enhancement of Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors

Song, Seung Min; Oh, Joong Gun; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-26

21
Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

Seo, Yujin; Lee, Tae In; Ahn, Hyunjun; Moon, Jungmin; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.4242 - 4245, 2017-10

22
Field-Controlled Ion Doping of Graphene

Kinder, Erich; Lu, Hao; Hwang, Wan Sik; Cho, Byung Jin; Hong, Seul Ki; Seabaugh, Alan; Fullerton-shirey, Susan, 225th ECS Meeting(Carbon Nanostructures and Devices), The electrochemical Society, 2014-05-12

23
Fluorine Effects Originating from the CVD W Process on Charge-Trap Flash Memory Cells

Moon, Jung Min; Lee, Tae Yoon; Ahn, Hyunjun; Lee, Tae In; Hwang, Wan Sik; Cho, Byung-Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.1, pp.378 - 382, 2019-01

24
Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Ahn, Hyunjun; Moon, Jungmin; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Hwang, Wan Sik; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603, 2017-06

25
Ge 기반의 소자에서 Y-ZrO2 게이트 유전체를 이용한 EOT 스케일링(~5.7 A) 및 누설 전류와 계면 트랩의 감소

Lee, Tae In; Kim, Min Ju; Manh-Cuong Nguyen; Ahn, Hyunjun; Moon, Jung Min; Lee, Tae Yoon; Yu, Hyun-Young; et al, 제25회 한국반도체학술대회, 서강대학교, 2018-02-07

26
Graphene as an Ultrathin Diffusion Barrier for Advanced Cu Metallization

Bong, Jae Hoon; Yoon, Seong Jun; Yoon, Alexander; Hwang, Wan Sik; Cho, Byung-Jin, Graphene Week 2015, Graphene Week 2015, 2015-06-24

27
H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

Lee, Tae In; Manh-Cuong Nguyen; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353, 2019-09

28
Hf- and Ti-Based Organic/Inorganic Hybrid Dielectrics Synthesized via Chemical Vapor Phase for Advanced Gate Stack in Flexible Electronic Devices

Kim, Min Ju; Lee, Changhyeon; Jeong, Jaejoong; Kim, Seongho; Lee, Tae In; Shin, Eui Joong; Hwang, Wan Sik; et al, ADVANCED ELECTRONIC MATERIALS, v.7, no.4, pp.2001197, 2021-04

29
High Quality N+/P Junction of Ge Substrate Prepared by initiated CVD Doping Process

Kim, Jae Hwan; Shin, Sung Won; Lee, Tae In; Hwang, Wan Sik; Cho, Byung-Jin, 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020, Institute of Electrical and Electronics Engineers Inc., 2020-06-19

30
High-Aspect Ratio beta-Ga2O3 Nanorods via Hydrothermal Synthesis

Bae, Hyun Jeong; Yoo, Tae Hee; Yoon, Youngbin; Lee, In Gyu; Kim, Jong Pil; Cho, Byung Jin; Hwang, Wan Sik, NANOMATERIALS, v.8, no.8, 2018-08

31
High-performance graphene-based transistors with iCVD dielectrics and its application to flexible RF circuit

Oh, Joong Gun; Pak, Kwanyong; Kim, Choong Sun; Bong, Jae Hoon; Hwang, Wan Sik; Im, Sung Gap; Cho, Byung-Jin, The 10th International Conference on Advanced Materials and Devices, Applied Physics Division, The Korean Physical Society, 2017-12-06

32
Highly Reliable Charge Trap-Type Organic Non-Volatile Memory Device Using Advanced Band-Engineered Organic-Inorganic Hybrid Dielectric Stacks

Kim, Min Ju; Lee, Changhyeon; Shin, Eui Joong; Lee, Tae In; Kim, Seongho; Jeong, Jaejoong; Choi, Junhwan; et al, ADVANCED FUNCTIONAL MATERIALS, v.31, no.41, 2021-10

33
Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits

Hong, Seul Ki; Kim, Choong Sun; Hwang, Wan Sik; Cho, Byung-Jin, ACS NANO, v.10, no.7, pp.7142 - 7146, 2016-07

34
Hydrothermal Synthesis and Photocatalytic Property of Sn-doped beta-Ga2O3 Nanostructure

Ryou, Heejoong; Yoo, Tae Hee; Yoon, Youngbin; Lee, In Gyu; Shin, Myunghun; Cho, Junsang; Cho, Byung Jin; et al, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.9, no.4, pp.045009, 2020-04

35
Impact of Al doping on a hydrothermally synthesized beta-Ga2O3 nanostructure for photocatalysis applications

Kim, Sunjae; Ryou, Heejoong; Lee, In Gyu; Shin, Myunghun; Cho, Byung Jin; Hwang, Wan Sik, RSC ADVANCES, v.11, no.13, pp.7338 - 7346, 2021-02

36
Impact of oxygen deficiency and shallow hole-traps on high-responsivity ZnO-based UV photodetectors

Kim, Minje; Baek, Jongsu; Kim, Sunjae; Hwang, Wan Sik; Cho, Byung-Jin; Shin, Myunghun, SENSORS AND ACTUATORS A-PHYSICAL, v.369, 2024-04

37
Impedance Spectroscopy Analysis and Equivalent Circuit Modeling of Graphene Oxide Solutions

Yoon, Youngbin; Jo, Jeonghoo; Kim, Seungdu; Lee, In Gyu; Cho, Byung Jin; Shin, Myunghun; Hwang, Wan Sik, NANOMATERIALS, v.7, no.12, 2017-12

38
Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors

Song, Seung-Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung-Jin, SCIENTIFIC REPORTS, v.6, 2016-05

39
Improved Electromigration-Resistance of Cu Interconnects by Graphene-Based Capping Layer

Yoon, Seong Jun; Yoon, Alexander; Hwang, Wan Sik; Choi, Sung-Yool; Cho, Byung-Jin, 2015 Symposium on VLSI Technology, 2015 Symposium on VLSI Technology, 2015-06-15

40
Improvement of electrical and optoelectronic properties of ZnO thin films by plasma nitridation treatment

Kim, Minje; Baek, Jongsu; Kim, Sunjae; Bae, Joonyup; Cho, Byung-Jin; Kim, Jihyun; Hwang, Wan Sik, Optical Materials, 2024-07

41
Influence of Self-heating Effect on Interface Trap Generation in Highly Flexible sc-Si Nanomembrane Transistors

Bong, Jae Hoon; KIM, SEUNGYOON; Jeong, Chan Bae; Chang, Ki Soo; Hwang, Wan Sik; Cho, Byung-Jin, The 10th International Conference on Advanced Materials and Devices, Applied Physics Division, The Korean Physical Society, 2017-12-06

42
Influence of Self-Heating Effect on Interface Trap Generation in Highly Flexible Single-Crystalline Si Nanomembrane Transistors

Bong, Jae Hoon; Kim, Seung-Yoon; Jeong, Chan Bae; Chang, Ki Soo; Hwang, Wan Sik; Cho, Byung Jin, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.19, no.10, pp.6481 - 6486, 2019-10

43
Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Seo, Yujin; Kim, Choong-Ki; Lee, Tae-In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang-Kyu; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.3998 - 4001, 2017-10

44
Low-Voltage Nonvolatile Graphene Memory Based on Ion Transport

Lu, Hao; Kinder, Erich; Vahala, Josh; Hwang, Wan Sik; Gong, Cheng; Cho, Kyeongjae; Hong, Seul Ki; et al, 9th International Nanotechnology Conference on Communication and Cooperation, INC, 2013-05-14

45
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04

46
Material characteristics and equivalent circuit models of stacked graphene oxide for capacitive humidity sensors

Han, Kook In; Du Kim, Seung; Yang, Woo Seok; Kim, Hyeong Seok; Shin, Myunghun; Kim, Jong Pil; Lee, In Gyu; et al, AIP ADVANCES, v.6, no.3, 2016-03

47
Mechanical and Electrical Reliability Analysis of Flexible Si Complementary Metal-Oxide-Semiconductor Integrated Circuit

Kim, Seungyoon; Kim, Cheolgyu; Bong, Jae Hoon; Hwang, Wan Sik; Kim, Taek-Soo; Oh, Jae Sub; Cho, Byung Jin, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.19, no.10, pp.6473 - 6480, 2019-10

48
Mechanical Stability Analysis via Neutral Mechanical Plane for High-Performance Flexible Si Nanomembrane FDSOI Device

Kim, Seung-Yoon; Bong, Jae Hoon; Kim, Cheolgyu; Hwang, Wan Sik; Kim, Taek-Soo; Cho, Byung Jin, ADVANCED MATERIALS INTERFACES, v.4, no.21, 2017-11

49
Method to Achieve the Morphotropic Phase Boundary in HfxZr1-xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications

Kim, Seongho; Lee, Seung Hwan; Kim, Min Ju; Hwang, Wan Sik; Jin, Hyun Soo; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.42, no.4, pp.517 - 520, 2021-04

50
Novel Electronic Devices using Graphene Nanoribbons

Hwang, Wan Sik; Cho, Byung Jin; Seabaugh, Alan; Xing, Grace; Jena, Debdeep, The 9th international conference on advanced materials and devices, The 9th international conference on advanced materials and devices, 2015-12-08

51
Novel Vapor-Phase Synthesis of Flexible, Homogeneous Organic-Inorganic Hybrid Gate Dielectric with sub 5 nm Equivalent Oxide Thickness

김민주; Pak, Kwanyong; Hwang, Wan Sik; Im, Sung Gap; Cho, Byung Jin, ACS APPLIED MATERIALS & INTERFACES, v.10, no.43, pp.37326 - 37334, 2018-10

52
Performance Degradation of Flexible Si Nanomembrane Transistors with Al2O3 and SiO2 Dielectrics under Mechanical Stress

Kim, Seung-Yoon; Bong, Jae Hoon; Kim, Dong Jun; Kim, Choong Sun; Choi, Hyeongdo; Hwang, Wan Sik; Cho, Byung-Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.7, pp.3069 - 3072, 2018-07

53
Performance enhancement of p-type organic thin-film transistors by surface modification of hybrid dielectrics

Kim, Min Ju; Lee, Tae In; Lee, Changhyeon; Shin, Eui-Joong; Kim, Seongho; Jeong, Jaejoong; Hwang, Wan Sik; et al, ORGANIC ELECTRONICS, v.96, pp.106250, 2021-09

54
Reliability improvement of a flexible FD-SOI MOSFET via heat management

Bong, Jae Hoon; Kim, Seung-Yoon; Jeong, Chan Bae; Chang, Ki Soo; Hwang, Wan Sik; Cho, Byung Jin, APPLIED PHYSICS LETTERS, v.110, no.25, 2017-06

55
Resistance analysis and device design guideline for graphene RF transistors

Hong, Seul Ki; Jeon, Sang Chul; Hwang, Wan Sik; Cho, Byung Jin, 2D MATERIALS, v.2, no.3, 2015-07

56
Resistive Random Access Memory Behaviors in Organic-Inorganic Hybrid Ultra-thin Films

Kim, Min Ju; Martinez, Alba; Jeong, Jaejoong; Kim, Seongho; Hwang, Wan Sik; Cho, Byung-Jin, ADVANCED ELECTRONIC MATERIALS, v.8, no.10, 2022-10

57
Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV

Seo, Dahee; Baek, Jongsu; Cho, Byung-Jin; Hwang, Wan Sik, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.169, 2024-01

58
Synthesis of Ultrathin, Homogeneous Copolymer Dielectrics to Control the Threshold Voltage of Organic Thin-Film Transistors

Pak, Kwanyong; Seong, Hyejeong; Choi, Junhwan; Hwang, Wan Sik; Im, Sung Gap, ADVANCED FUNCTIONAL MATERIALS, v.26, no.36, pp.6574 - 6582, 2016-09

59
The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks

Seo, Yujin; Lee, Tae In; Yoon, Chang Mo; Park, Bo Eun; Hwang, Wan Sik; Kim, Hyungjun; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3303 - 33007, 2017-08

60
The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts

Seo, Yu Jin; Lee, Sukwon; Baek, Seung-heon Chris; Hwang, Wan Sik; Yu, Hyun-Yong; Lee, Seok-Hee; Cho, Byung-Jin, IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.997 - 1000, 2015-10

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