One of the essential components in this era of the Internet of Things (IoT) and wearable technologies, is a flexible and high performance resistive random access memory (ReRAM) device. In this paper, the authors propose a new copolymer-based ReRAM device that is realized using an initiated chemical vapor deposition (iCVD) process. The 7-nm-thick copolymer ReRAM device exhibits endurance properties as high as 10(5) and switching power as low as 438 mu W. The strong endurance of the copolymer-based ReRAM device originates from the properties of the robust poly-1,3,5-trivinyl-trimethyl-cyclotrisiloxane dielectric film, while its low on-current at the operating voltage is attributed to the properties of the poly-2-hydroxyethyl methacrylate dielectric with the Al electrode. The proposed ReRAM also has the additional advantage of forming-free switching characteristics.