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Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Kim, Hansung; Han, Jae-Hoon; Hwang, Do Kyung; Song, Jin Dong; et al, APPLIED PHYSICS LETTERS, v.115, no.14, 2019-09 |
InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K Kang, Soo Seok; Geum, Dae-Myeong; Kwak, Kisung; Kang, Ji-Hoon; Shim, Cheol-Hwee; Hyun, HyeYoung; Kim, Sang Hyeon; et al, SCIENTIFIC REPORTS, v.9, 2019-09 |
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