Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode

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In this work, we fabricated n-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) with a metal-oxide-semiconductor (MOS) interface of Y2O3/In0.53Ga0.47As. We investigated interfacial properties of the gate stack through the H-2 ambient annealing process in MOSCAPs. We obtained an extremely low interface trap density of D-it = 1.8 x 10(11) cm(-2) eV(-1). We compared the H-2 annealing effect in different gate electrode materials of Ni and Pt. We determined that the Pt electrode was effective in maximizing the impact of H-2 annealing. Also, we fabricated In0.53Ga0.47As-on-insulator MOS field-effect-transistors using an optimized annealing process, which showed more stable electrical characteristics than devices through the N-2 ambient annealing process.
Publisher
AMER INST PHYSICS
Issue Date
2019-09
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.115, no.14

ISSN
0003-6951
DOI
10.1063/1.5111377
URI
http://hdl.handle.net/10203/268115
Appears in Collection
EE-Journal Papers(저널논문)
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