InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

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Short-wave infrared (SWIR) detectors and emitters have a high potential value in several fields of applications, including the internet of things (IoT) and advanced driver assistance systems (ADAS), gas sensing. Indium Gallium Arsenide (InGaAs) photodetectors are widely used in the SWIR region of 1-3 mu m; however, they only capture a part of the region due to a cut-off wavelength of 1.7 mu m. This study presents an InAs p-i-n photodetector grown on a GaAs substrate (001) by inserting 730-nm thick InxAl1-xAs graded and AlAs buffer layers between the InAs layer and the GaAs substrate. At room temperature, the fabricated InAs photodetector operated in an infrared range of approximately 1.5-4 mu m and its detectivity (D*) was 1.65 x 10(8) cm.Hz(1/2).W-1 at 3.3 mu m. To demonstrate performance, the Sherlock Holmes mapping images were obtained using the photodetector at room temperature.
Publisher
NATURE PUBLISHING GROUP
Issue Date
2019-09
Language
English
Article Type
Article
Citation

SCIENTIFIC REPORTS, v.9

ISSN
2045-2322
DOI
10.1038/s41598-019-49300-z
URI
http://hdl.handle.net/10203/269947
Appears in Collection
EE-Journal Papers(저널논문)
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