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Analysis of a transient region during the initial stage of atomic layer deposition Lim, Jung-Wook; Park, Hyung-Sang; Kang, Sang-Won, JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6327 - 6331, 2000-09 |
A Study of Cu Metal Deposition on Amorphous Si Film from Cu solution for Low-Temperature Crystallization of Amorphous Si Films Sohn, Dong-Hyun; Lee, Jeong No; Kang, Sang-Won; Ahn, Byung Tae, Journal of The Electrochemical Society, vol.144, no.10, pp.3592-3596, 1997-07-01 |
Kinetic Modeling of Film Growth Rate in Atomic Layer Deposition Lim, J.; Park, H.; Sang-Won Kang, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.148, no.6, pp.C403 - C408, 2001-06 |
Plasma-enhanced atomic layer deposition of Ta-N thin films Park, JS; Park, HS; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.1, pp.28 - 32, 2002-01 |
Atomic layer deposition of Al2O3 thin films using trimethylaluminum and isopropyl alcohol Jeon, WS; Yang, S; Lee, CS; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.6, pp.306 - 310, 2002-06 |
Bottom-up filling of submicrometer features in catalyst-enhanced chemical vapor deposition of copper Shim, KC; Lee, HB; Kwon, OK; Park, HS; Koh, W; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.2, pp.109 - 113, 2002-02 |
Atomic layer deposition of nickel by the reduction of preformed nickel oxide Chae, Junghun; Park, Hyuong-Sang; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.5, no.6, pp.C64 - C66, 2002-06 |
Plasma-enhanced atomic layer deposition of TaN thin films using tantalum-pentafluoride and N-2/H-2/Ar plasma Chung, Hoi-Sung; Kwon, Jung-Dae; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.11, pp.C751 - C754, 2006 |
PEALD of a ruthenium adhesion layer for copper interconnects Kwon, OK; Kwon, SH; Park, HS; Kang, SW, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.12, pp.C753 - C756, 2004 |
Plasma-enhanced atomic layer deposition of Ru-TiN thin films for copper diffusion barrier metals Kwon, SH; Kwon, OK; Min, JS; Kang, SW, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.6, pp.G578 - G581, 2006 |
Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3 Park, Pan Kwi; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.89, no.19, 2006-11 |
Interface effect on dielectric constant of HfO2/Al 2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition Park, Pan Kwi; Cha, Eun-Soo; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.90, no.23, pp.232906, 2007-06 |
Atomic layer deposition of ruthenium thin films for copper glue layer Kwon, OK; Kim, JH; Park, HS; Kang, SW, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.2, pp.G109 - G112, 2004-01 |
Film growth model of atomic layer deposition for multicomponent thin films Kim, JH; Kim, JY; Kang, SW, JOURNAL OF APPLIED PHYSICS, v.97, no.9, 2005-05 |
Step coverage modeling of thin films in atomic layer deposition Kim, Ja-Yong; Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Jin-Hyock, JOURNAL OF APPLIED PHYSICS, v.101, no.7, 2007-04 |
Improvement of the morphological stability by stacking RuO2 on ru thin films with atomic layer deposition Kwon, Se-Hun; Kwon, Oh-Kyum; Kim, Jae-Hoon; Jeong, Seong-Jun; Kim, Sung-Wook; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.9, pp.H773 - H777, 2007 |
The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films Min, Jae-Sik; Park, Jin-Seong; Park, Hyung-Sang; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.10, pp.3868 - 3872, 2000-06 |
Effect of crystallinity and nonstoichiometric region on dielectric properties of SrTiO3 films formed on Ru Kim, Ja-Yong; Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Jin-Hyock; Roh, Jae-Sung, APPLIED PHYSICS LETTERS, v.91, no.9, 2007-08 |
Measurement of thermal expansion coefficient of poly-Si using microgauge sensors Chae, Jung-Hun; Lee, Jae-Youl; Kang, Sang-Won, SPIE Vol. 3242, pp.202-211, 1997 |
A.C. Complex Impedance Investigation of RuO2-Glass Composites Koo, Bon Keup; No, Kwangsoo; Kim, Ho Gi, IEEE TRANSACTIONS ON COMPONENTS, HYBRIDS AND MANUFACTURING TECHNOLOGY, v.14, no.3, pp.580 - 584, 1991-09 |
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