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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k center dot p method Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.106, no.5, 2009-09 | |
| Quantum simulation of device characteristics of silicon nanowire FETs Shin, Mincheol, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.6, no.2, pp.230 - 237, 2007-03 | |
| Simulation Study of the Scaling Behavior of Top-Gated Carbon Nanotube Field Effect Transistors Shin, Mincheol; Lee, Jaehyun; Ahn, Chiyui, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5389 - 5392, 2008-10 | |
| Non-equilibrium Greens function approach to three-dimensional carbon nanotube field effect transistor Simulations Shin, Mincheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1287 - 1291, 2008-04 | |
| Quantum simulation of coaxially gated CNTFETs by using an effective mass approach Ahn, C; Shin, Mincheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1887 - 1893, 2007-06 |
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