Simulation Study of the Scaling Behavior of Top-Gated Carbon Nanotube Field Effect Transistors

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Device simulations on three-dimensional top-gated carbon nanotube field effect transistors (CNTFETs) have been performed by considering the quantum transport described in the framework of non-equilibrium Green's function method. Device characteristics of various top-gated CNTFETs, such as Schottky-barrier CNTFETs, CNTFETs with doped source and drain, and tunnel-FET-like CNTFETs, have been examined, focusing on their scaling behavior as the channel length is ultimately reduced down to a few nanometers. Comparison with coaxially-gated devices is also made.
Publisher
AMER SCIENTIFIC PUBLISHERS
Issue Date
2008-10
Language
English
Article Type
Article; Proceedings Paper
Keywords

PERFORMANCE

Citation

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5389 - 5392

ISSN
1533-4880
URI
http://hdl.handle.net/10203/89191
Appears in Collection
EE-Journal Papers(저널논문)
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