Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k center dot p method

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We have developed a three-dimensional, self-consistent full-quantum transport simulator for nanowire field effect transistors based on the eight-band k center dot p method. We have constructed the mode-space Hamiltonian via a unitary transformation from the Hamiltonian discretized in the k-space, and reduced its size significantly by selecting only the modes that contribute to the transport. We have also devised an approximate but highly accurate method to solve the cross-sectional eigenvalue problems, thereby overcoming the numerical bottleneck of the mode-space approach. We have therefore been able to develop a highly efficient device simulator. We demonstrate the capability of our simulator by calculating the hole transport in a p-type Si nanowire field effect transistor and the band-to-band tunneling current in a InAs nanowire tunnel field effect transistor.
Publisher
AMER INST PHYSICS
Issue Date
2009-09
Language
English
Article Type
Article
Keywords

EFFECTIVE-MASS APPROXIMATION; FIELD-EFFECT TRANSISTORS; PERFORMANCE; MOSFETS

Citation

JOURNAL OF APPLIED PHYSICS, v.106, no.5

ISSN
0021-8979
DOI
10.1063/1.3208067
URI
http://hdl.handle.net/10203/100374
Appears in Collection
EE-Journal Papers(저널논문)
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