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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| New h/e oscillations and electrostatic Aharonov-Bohm effect in a GaAs/AlGaAs-based mesoscopic ring Park, K; Lee, S; Shin, Mincheol; Lee, EH; Kwon, HC, SURFACE SCIENCE, v.362, no.1-3, pp.751 - 755, 1996 | |
| Electron interference due to localization paths in an Aharanov-Bohm ring Park, KW; Lee, SJ; Shin, Mincheol; Lee, EH; Kwon, HC, PHYSICAL REVIEW B, v.54, no.3, pp.1498 - 1501, 1996-07 | |
| Macroscopic persistent current in the quantum Hall regime Lee, S; Park, KW; Shin, Mincheol; Yuk, JS; Kim, S; Lee, EH; Kwon, HC, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.31, no.2, pp.329 - 336, 1997-08 | |
| Feasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transport Ryu, Hoon; Park, Hong-Hyun; Shin, Mincheol; Vasileska, Dragica; Klimeck, Gerhard, JOURNAL OF APPLIED PHYSICS, v.111, no.6, pp.063705, 2012-03 | |
| Additional Coulomb blockade and negative differential conductance in closed two-dimensional tunnel junction arrays Shin, Mincheol; Lee, SJ; Park, KW; Lee, E, JOURNAL OF APPLIED PHYSICS, v.84, no.5, pp.2974 - 2976, 1998-09 | |
| Effects of pH and Ion Concentration in a Phosphate Buffer Solution on the Sensitivity of Silicon Nanowire BioFETs Lee, Jaehyun; Shin, Mincheol; Ahn, Chang-Guen; Ah, Chil Seong; Park, Chan Woo; Sung, Gun Yong; Shin, M; Ah, CS; Park, CW, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.4, pp.1621 - 1625, 2009-10 | |
| Quantum Mechanical Simulation of Hole Transport in p-Type Si Schottky Barrier MOSFETs Choi, Wonchul; Shin, Mincheol, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, pp.5861 - 5864, 2011-07 | |
| Computational Study on the Performance of Si Nanowire pMOSFETs Based on the k . p Method Shin, Mincheol; Lee, S; Klimeck, G, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.9, pp.2274 - 2283, 2010-09 | |
| Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k center dot p method Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.106, no.5, 2009-09 | |
| Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors Shin, Mincheol, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10 |
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