Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors

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Rigorous quantum mechanical transport calculations based on the multi-band k . p Hamiltonian are performed in this work to show that the coupling of heavy and light holes (LHs) greatly reduces on-state hole current in ultra-scaled p-type Si nanowire FETs. If the coupling between the heavy and light holes is artificially suppressed, on-current of the p-type devices almost doubles and becomes comparable to that of n-type counterparts. It is found that the effect of the coupling on the hole transport is maximized at the channel width of around 5 nm. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3644959]
Publisher
AMER INST PHYSICS
Issue Date
2011-10
Language
English
Article Type
Article
Keywords

PERFORMANCE; SILICON

Citation

APPLIED PHYSICS LETTERS, v.99, no.14

ISSN
0003-6951
URI
http://hdl.handle.net/10203/100371
Appears in Collection
EE-Journal Papers(저널논문)
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