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Results 11-20 of 29 (Search time: 0.003 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOSCALE, v.12, no.16, pp.9024 - 9031, 2020-04 | |
| Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.41, no.8, pp.1193 - 1196, 2020-08 | |
| Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO2 Electrode Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.8, pp.3431 - 3434, 2020-08 | |
| Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp.1996 - 2002, 2021-04 | |
| Broad spectral responsivity in highly photoconductive InZnO/MoS2 heterojunction phototransistor with ultrathin transparent metal electrode Das, Dipjyoti; Park, Junghak; Ahn, Minho; Park, Sungho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.31, no.3, 2020-01 | |
| Effect of Ga composition on mobility in a-InGaZnO thin-film transistors Ahn, Minho; Gaddam, Venkateswarlu; Park, Sungho; Jeon, Sanghun, NANOTECHNOLOGY, v.32, no.9, 2021-02 | |
| Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer Joh, Hongrae; Jung, Taeseung; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2538 - 2542, 2021-05 | |
| Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 degrees C) Annealing Process Gaddam, Venkateswarlu; Das, Dipjyoti; Jung, Taeseung; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.812 - 815, 2021-06 | |
| Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, JOURNAL OF APPLIED PHYSICS, v.129, no.24, 2021-06 | |
| Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing Woo, Jiyong; Goh, Youngin; Im, Solyee; Hwang, Jeong Hyeon; Kim, Yeriaron; Kim, Jeong Hun; Im, Jong-Pil; Yoon, Sung-Min; Moon, Seung Eon; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.41, no.2, pp.232 - 235, 2020-02 |
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