Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO2 Electrode

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Electrical and reliability characteristics of hafnia ferroelectric capacitor are influenced by a capping electrode layer which controls the type of stress and the amount of oxygen vacancy inside hafnia. Here, we present the impact of metal nitride and metal oxide electrode on the ferroelectricity of a Hf0.5Zr0.5O2 (HZO) capacitor. For comparison, we employed two different top electrodes (RuO2 and TiN) with hafnia ferroelectric layer, forming RuO2/HZO/TiN and TiN/HZO/TiN capacitors. The RuO2 top electrode provides additional oxygen to the HZO film, lowering the amount of oxygen vacancies in the film. From material analysis, we found that the top RuO2/HZO interface exhibits less oxygen vacancy in comparison to the top TiN/HZO interface. In addition, for RuO2/HZO/TiN, due to different thermal expansion coefficient between top and bottom electrodes, the HZO film experiences significant tensile stress, resulting in the high o-phase formation and remnant polarization (similar to 20 mu C/cm(2)) as compared with that of TiN/HZO/TiN capacitor (similar to 13 mu C/cm(2)). This article suggests an efficient solution to reduce the interfacial defects and oxygen vacancies as well as to enhance o-phase formation and ferroelectricity.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2020-08
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.8, pp.3431 - 3434

ISSN
0018-9383
DOI
10.1109/TED.2020.2998444
URI
http://hdl.handle.net/10203/275977
Appears in Collection
MS-Journal Papers(저널논문)EE-Journal Papers(저널논문)
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