Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors

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In this study, we have carried out an in-depth analysis on the role of high-pressure annealing (HPA) conditions on ferroelectricity as well as the interfacial property of HfxZr1-xO2 (HZO) capacitors in metal-ferroelectric-metal (MFM) structure. Unlike conventional 1:1 HZO films, HZO demonstrates the highest ferroelectricity at 1:3 Hf:Zr ratio in HPA and a significantly higher maximum remanent polarization (P-r) of 31 mu C/cm(2) was achieved as compared to 19 mu C/cm(2) obtained in rapid thermal annealing (RTA) (HZO [1:1]). To understand the influence of HPA conditions, HZO [1:3] capacitors are annealed at various temperatures (300 degrees C, 400 degrees C, 500 degrees C, and 600 degrees C) and pressures (1, 50, and 200 atm). Ferroelectricity in HZO is found to enhance with increasing HPA temperature or pressure due to higher ferroelectric phase formation as revealed by grazing incidence X-ray diffractometer (GIXRD) analysis. Transient pulse switching measurement suggests the reduction in the effective thickness of the interfacial nonferroelectric film at a high HPA temperature or pressure which was also validated by impedance analysis. Further, impedance analysis reveals a reduction in the number of oxygen vacancy defects with increasing annealing temperature or pressure implying a phase transition from the tetragonal phase of nonferroelectric layer to the ferroelectric orthorhombic phase. In addition, excellent endurance property till 10(9) cycles with reduced wake-up effect was observed in HZO [1:3] capacitors with increasing the HPA temperature, while higher annealingpressureis foundto increase P-r without affecting its endurance property. The results obtained herein can be of significant scientific importance, especially to achieve enhanced ferroelectric property with reduced wake-up effect in Zr-rich HZO ferroelectrics.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2021-04
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp.1996 - 2002

ISSN
0018-9383
DOI
10.1109/TED.2021.3061963
URI
http://hdl.handle.net/10203/282460
Appears in Collection
EE-Journal Papers(저널논문)
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