Browse "EE-Journal Papers(저널논문)" by Subject CAPACITORS
Showing results 1 to 9 of 9
| A method of controlling the imprint effect in hafnia ferroelectric device Shin, Hunbeom; Gaddam, Venkateswarlu; Goh, Youngin; Jeong, Yeongseok; Kim, Giuk; Qin, Yixin; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.122, no.2, 2023-01 |
| A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology Jung, Minhyun; Gaddam, Venkateswarlu; Jeon, Sanghun, NANO CONVERGENCE, v.9, no.1, pp.1 - 18, 2022-10 |
| Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.12, pp.4676 - 4682, 2000-12 |
| Deoxidization of iridium oxide thin film Cha, SY; Lee, Hee Chul, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.38, no.10A, pp.1128 - 1130, 1999-10 |
| Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit Lee, Min Su; Lee, Hee Chul, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.60, no.4, pp.3084 - 3091, 2013-08 |
| Effects of Ir electrodes on the dielectric constants of Ba0.5Sr0.5TiO3 films Cha, SY; Jang, BT; Lee, Hee Chul, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.38, no.1AB, pp.49 - 51, 1999-01 |
| High-k HfxZr1-xO2 Ferroelectric Insulator by Utilizing High Pressure Anneal Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.6, pp.2489 - 2494, 2020-06 |
| Influence of TiO2 adhesion layer thickness on properties of (Ba,Sr)TiO3 thin films Kim, YJ; Lee, YS; Lee, Hee Chul, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, pp.6167 - 6169, 2005-08 |
| Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing Gaddam, Venkateswarlu; Kim, Giuk; Kim, Taeho; Jung, Minhyun; Kim, Chaeheon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43463 - 43473, 2022-09 |
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