Detection of open and short faults in 3D-ICs based on through silicon via (TSV)

Abstract

This paper proposes a procedure for estimating the location of open or short defects in a Through Silicon Via daisy-chain structure. The equivalent inductance and capacitance are extracted, at low frequency, through the measured and/or computed Z11 parameter of a three dimensional model in which the short and open defects are intentionally created in specific points.