Application of Rapid Thermal Annealing Process to the Display Technology
We report the effect of a rapid thermal annealing process (RTP) on the ion dopant activation process in LTPS TFT on PI substrate and on the electrical properties of Al-doped InZnSnO thin film transistor (TFT) with back-channel etched BCE structure.
- Publisher
- John Wiley and Sons Inc
- Issue Date
- 2018-05
- Language
- English
- Citation
SID Symposium, Seminar, and Exhibition 2018, Display Week 2018, pp.748 - 750
- ISSN
- 0097-966X
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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