DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Ji, Sanghyun | ko |
dc.contributor.author | Jeong, Pilseong | ko |
dc.contributor.author | Nam, Yunyong | ko |
dc.contributor.author | Yang, Jong-Heon | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.date.accessioned | 2023-08-29T10:00:40Z | - |
dc.date.available | 2023-08-29T10:00:40Z | - |
dc.date.created | 2023-07-06 | - |
dc.date.issued | 2018-05 | - |
dc.identifier.citation | SID Symposium, Seminar, and Exhibition 2018, Display Week 2018, pp.748 - 750 | - |
dc.identifier.issn | 0097-966X | - |
dc.identifier.uri | http://hdl.handle.net/10203/311952 | - |
dc.description.abstract | We report the effect of a rapid thermal annealing process (RTP) on the ion dopant activation process in LTPS TFT on PI substrate and on the electrical properties of Al-doped InZnSnO thin film transistor (TFT) with back-channel etched BCE structure. | - |
dc.language | English | - |
dc.publisher | John Wiley and Sons Inc | - |
dc.title | Application of Rapid Thermal Annealing Process to the Display Technology | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-85138711628 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 748 | - |
dc.citation.endingpage | 750 | - |
dc.citation.publicationname | SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 | - |
dc.identifier.conferencecountry | US | - |
dc.identifier.conferencelocation | Los Angeles, CA | - |
dc.identifier.doi | 10.1002/SDTP.12341 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Ji, Sanghyun | - |
dc.contributor.nonIdAuthor | Jeong, Pilseong | - |
dc.contributor.nonIdAuthor | Nam, Yunyong | - |
dc.contributor.nonIdAuthor | Yang, Jong-Heon | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
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