Highly stable high mobility oxide TFT for high resolution AMOLED
We report the methodologies of the way to the highly stable high mobility top gate Al:ITZO TFT. We introduced ECR high density plasma sputtering method and proper plasma treatment, followed by the proper H supply to the active layer for negligible charge trapping characteristics to yield high stability.
- Publisher
- International Display Workshops
- Issue Date
- 2018-12
- Language
- English
- Citation
25th International Display Workshops, IDW 2018, pp.299 - 301
- ISSN
- 1883-2490
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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