Highly stable high mobility oxide TFT for high resolution AMOLED
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ko, Jong Beom | ko |
| dc.contributor.author | Lee, Seung-Hee | ko |
| dc.contributor.author | Park, Kyoungwoo | ko |
| dc.contributor.author | Lee, Jeong-Rak | ko |
| dc.contributor.author | Park, Wan-Woo | ko |
| dc.contributor.author | Park, Sang-Hee Ko | ko |
| dc.date.accessioned | 2023-08-15T02:00:22Z | - |
| dc.date.available | 2023-08-15T02:00:22Z | - |
| dc.date.created | 2023-07-06 | - |
| dc.date.issued | 2018-12 | - |
| dc.identifier.citation | 25th International Display Workshops, IDW 2018, pp.299 - 301 | - |
| dc.identifier.issn | 1883-2490 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/311513 | - |
| dc.description.abstract | We report the methodologies of the way to the highly stable high mobility top gate Al:ITZO TFT. We introduced ECR high density plasma sputtering method and proper plasma treatment, followed by the proper H supply to the active layer for negligible charge trapping characteristics to yield high stability. | - |
| dc.language | English | - |
| dc.publisher | International Display Workshops | - |
| dc.title | Highly stable high mobility oxide TFT for high resolution AMOLED | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-85072102808 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 299 | - |
| dc.citation.endingpage | 301 | - |
| dc.citation.publicationname | 25th International Display Workshops, IDW 2018 | - |
| dc.identifier.conferencecountry | JA | - |
| dc.identifier.conferencelocation | Nagoya | - |
| dc.contributor.localauthor | Park, Sang-Hee Ko | - |
| dc.contributor.nonIdAuthor | Lee, Jeong-Rak | - |
| dc.contributor.nonIdAuthor | Park, Wan-Woo | - |
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