Thermal transmission line (TTL) and fluidic through silicon via (F-TSV) based embedded cooling structure for high bandwidth memory (HBM) module considering signal and thermal integrity (STI)

Abstract

In this paper, we firstly proposed a thermal transmission line and fluidic through silicon via based embedded cooling structure for next-generation high bandwidth memory module considering signal and thermal integrity. This paper aims to design the embedded cooling structure to secure both signal and thermal integrity performances. For this, we design and analyze the thermal transmission line and fluidic through silicon via considering signal and thermal integrity. In order to verify the proposed embedded cooling structure, we compared the thermal integrity performance and temperature-dependent signal integrity performances between the proposed embedded cooling structure and the previous structure. The proposed embedded cooling structure can cool down the high bandwidth memory module, and also prevents heat accumulation inside each DRAM dies. Finally, it is confirmed that the signal integrity performances considering the operating temperature is improved compared to the previous cooling structure.