DSpace at KOASAS: Self-Aligned Shallow Junction P+-gate GaAs HEFT for Higher Turn-on and Breakdown Voltages

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Self-Aligned Shallow Junction P+-gate GaAs HEFT for Higher Turn-on and Breakdown Voltages

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Jeon, B.T. / Han, J.H. / Kwon, Young Se researcher / Lee, Kwyro researcher

Publisher: International Device Research Symposium

Issue Date: 1991

Language: ENG

Citation: International Device Research Symposium, pp.331 - 334

URI: http://hdl.handle.net/10203/24940

Appears in Collection: EE-Conference Papers(학술회의논문)

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