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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Self-Aligned Shallow Junction P+-gate GaAs HEFT for Higher Turn-on and Breakdown Voltages

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dc.contributor.authorJeon, B.T.-
dc.contributor.authorHan, J.H.-
dc.contributor.authorKwon, Young Se-
dc.contributor.authorLee, Kwyro-
dc.date.accessioned2011-08-19-
dc.date.available2011-08-19-
dc.date.created2012-02-06-
dc.date.issued1991-
dc.identifier.citationInternational Device Research Symposium, v., no., pp.331 - 334-
dc.identifier.urihttp://hdl.handle.net/10203/24940-
dc.description.sponsorshipThis work was supported by the Korean Government Ministry of Science and Technology.en
dc.languageENG-
dc.language.isoen_USen
dc.publisherInternational Device Research Symposium-
dc.titleSelf-Aligned Shallow Junction P+-gate GaAs HEFT for Higher Turn-on and Breakdown Voltages-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage331-
dc.citation.endingpage334-
dc.citation.publicationnameInternational Device Research Symposium-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorJeon, B.T.-
dc.contributor.nonIdAuthorHan, J.H.-
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EE-Conference Papers(학술회의논문)
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