Showing results 1 to 31 of 31
13GHz 4.67dB NF CMOS low-noise amplifier Gil, JoonHo; Han, kwangseok; Shin, Hyung-Cheol, ELECTRONICS LETTERS, v.39, no.14, pp.1056 - 1058, 2003-07 |
A high speed and low power SOI inverter using active body-bias Gil, Joonho; Je, Minkyu; Lee, Jongho; Shin, Hyung-Cheol, SOLID-STATE ELECTRONICS, v.43, no.4, pp.791 - 799, 1999-04 |
A Miniaturized Low-Power Wireless Remote Environmental Monitoring System using Microfabricated Electrochemical Sensing Electrodes Lee, Kwyro; Yoon, Euisik; Shin, Hyung-Cheol; Yun, Kwang-Seuk; Gil, Joonho; Kim, Jinbong; Kim, Hong-Jeong; et al, 12th International Conference on Solid-State Sensors and Actuators (Transducers'03), pp.1867 - 1870, TANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th Innational Conference, 2003-06 |
A nano-structure memory with SOI edge channel Park, G; Han, S; Hwang, T; Shin, Hyung-Cheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S1003 - S1006, 1999-12 |
A New EEPROM with Side Floating Gates Having Different Work Function from Control Gate Ahn, Youngjoon; Han, Sangyeon; Kim, Hoon; Lee, Jongho; Shin, Hyung-Cheol, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.2, no.3, pp.157 - 163, 2002-09 |
A New Extraction Method of Small-Signal Parameters of MOSFETs for RF Modeling Kwon, Ickjin; Je, Minkyu; Yu, Hyun Kyu; Shin, Hyung-Cheol; Lee, Kwy-Ro, JOURNAL OF ELECTRICAL ENGINEERING AND INFORMATION SCIENCE, v.5, no.3, pp.291 - 295, 2000-06 |
A New Physical RF Model of Junction Varactors youngjoon ahn; kwangseok han; Shin, Hyung-Cheol, JAPANESE JOURNAL OF APPLIED PHYSICS, v.42, no.4B, pp.2110 - 2113, 2003-04 |
A silicon quantum wire transistor with one-dimensional subband effects Je, Minkyu; Han, Sangyeon; Kim, Ilgweon; Shin, Hyung-Cheol, SOLID-STATE ELECTRONICS, v.44, no.12, pp.2207 - 2212, 2000-12 |
A simple and accurate method for extracting substrate resistance of RF MOSFETs Han, JH; Je, Minkyu; Shin, Hyung-Cheol, IEEE ELECTRON DEVICE LETTERS, v.23, no.7, pp.434 - 436, 2002-07 |
A simple and analytical parameter-extraction method of a microwave MOSFET Kwon, Ickjin; Je, Minkyu; Lee, Kwyro; Shin, Hyung-Cheol, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.50, no.6, pp.1503 - 1509, 2002-06 |
A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction Je, Minkyu; Han, Jeonghu; Shin, Hyung-Cheol; Lee, Kwy-Ro, MICROELECTRONICS RELIABILITY, v.43, no.4, pp.601 - 609, 2003-04 |
A simple wide-band on-chip inductor model for silicon-based RF ICs Gil, J; Shin, Hyung-Cheol, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.51, pp.2023 - 2028, 2003-09 |
An RF model of the accumulation-mode MOS varactor valid in both accumulation and depletion regions Song, SS; Shin, Hyung-Cheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, pp.1997 - 1999, 2003-09 |
Characteristics of MOSFET with non-overlapped source-drain to gate Lee, H; Chang, SI; Lee, J; Shin, Hyung-Cheol, IEICE TRANSACTIONS ON ELECTRONICS, v.E85C, no.5, pp.1079 - 1085, 2002-05 |
Characteristics of p-channel Si nano-crystal memory Han, K; Kim, I; Shin, Hyung-Cheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.874 - 879, 2001-05 |
Characteristics of Si Nano-Crystal Memory Han, Kwangseok; Kim, Ilgweon; Shin, Hyung-Cheol, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.1, no.1, pp.40 - 49, 2001-03 |
Design of a Temperature-Compensated Crystal Oscillator Using The New Digital Trimming Method Je, Minkyu; Lee, Kyungmi; Gil, Joonho; Yoo, Hoijun; Shin, Hyung-Cheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.822 - 827, 2000-12 |
EFFECTS OF PLASMA CHARGING DAMAGE ON THE NOISE PERFORMANCE OF THIN-OXIDE MOSFETS MA, ZJ; Shin, Hyung-Cheol; KO, PK; HU, C, IEEE ELECTRON DEVICE LETTERS, v.15, no.6, pp.224 - 226, 1994-06 |
Extraction of Substrate Resistance of RF MOSFETs with Various Geometries Han, J; Je, Minkyu; Shin, Hyung-Cheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, no.2, pp.224 - 228, 2003-02 |
Fabrication of a dual-gate-controlled Coulomb blockade transistor based on a silicon-on-insulator structure b.t.lee; j.w.park; k.s.park; c.h.lee; s.w.paik; s.d.lee; jung.b.choi; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.13, no.12, pp.1463 - 1467, 1998-12 |
Gate Bias Dependence of Substrate Signal Coupling Effect in RF MOSFETs Je, Minkyu; Shin, Hyung-Cheol, IEEE ELECTRON DEVICE LETTERS, v.24, no.3, pp.183 - 185, 2003-03 |
Low power low noise amplifier Kwon, Ick Jin; Gil, Joon Ho; Shin, Hyung-Cheol |
Measurement of carrier generation lifetime in SOI devices Shin, Hyung-Cheol; Racanelli, M; Huang, WM; Foerstner, J; Hwang, T; Schroder, DK, SOLID-STATE ELECTRONICS, v.43, no.2, pp.349 - 353, 1999-02 |
Method for fabricating a non-volatile memory device using nano-crystal dots Shin, Hyung-Cheol; Kim, Ii Gweon; Lee, Jong Ho, 2000-12-26 |
One-Dimensional Subband Effects in a Gate-All-Around Silicon Quantum Wire Transistor Je, Minkyu; Han, Sangyeon; Kim, Ilgweon; Shin, Hyung-Cheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, no.94, pp.1007 - 1012, 1999-12 |
Overestimation of Oxide Defects Density in Large Test Capacitors Due to Plasma Processing Shin, Hyung-Cheol; Je, Minkyu; Hu, Chenming, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.44, no.9, pp.1554 - 1556, 1997-09 |
RF Characteristics of 0.18 um CMOS Transistors Han, Kwangseok; Han, Jeong-hu; Je, Minkyu; Shin, Hyung-Cheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, no.1, pp.45 - 48, 2002-01 |
RF Modeling of and MOS Varactor and MIM Capacitor in 0.18mm CMOS Technology Song, Seong-Sik; Han, Jeonghu; Je, Minkyu; Han, Kwangseok; Shin, Hyung-Cheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.922 - 926, 2002-12 |
Temperature-adaptive capacitor block and temperature-compensated crystal oscillator using it Yoo, Hoi-Jun; Shin, Hyung-Cheol; Je, Min-Kyu; Han, Seung-Ho, 2001-08-28 |
Thin gate oxide damage due to plasma processing Shin, Hyung-Cheol; Hu, CM, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.11, no.4, pp.463 - 473, 1996-04 |
활성 바디 바이어스를 이용한 고속, 저전력 SOI 인버터 Gil, Joonho; Je, Minkyu; Lee, Jongho; Shin, Hyung-Cheol, 전자공학회논문지, v.35, no.12, pp.41 - 47, 1998-12 |
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