A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction
After differences between the RF MOSFET and conventional high-frequency transistors, which make the proper modeling of RF MOSFET complicated and difficult, are addressed, a four-terminal small-signal model of an RF MOSFET with a very simple and accurate parameter extraction method is presented. This model includes the intrinsic and extrinsic elements important for RF AC simulation in the strong inversion operation region. Accuracy of the model and extraction method is verified with the measured data and the needs of the intrinsic body node are demonstrated to describe the gate bias dependence of the substrate-signal-coupling effect. (C) 2003 Elsevier Science Ltd. All rights reserved.
- Publisher
- Pergamon-Elsevier Science Ltd
- Issue Date
- 2003-04
- Language
- English
- Article Type
- Article
- Keywords
SUBSTRATE RESISTANCE; MICROWAVE MOSFET; CMOS; DESIGN; TRANSISTORS; TECHNOLOGY; GHZ
- Citation
MICROELECTRONICS RELIABILITY, v.43, no.4, pp.601 - 609
- ISSN
- 0026-2714
- Appears in Collection
- EE-Journal Papers(저널논문)RIMS Journal Papers
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- There are no files associated with this item.
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