Showing results 7 to 17 of 17
GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding Kim, SangHyeon; Geum, Dae-Myeong; Park, Min-Su; Kim, Chang Zoo; Choi, Won Jun, SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.141, pp.372 - 376, 2015-10 |
Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials Kim, Sang-Hyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Ju, Gunwu; Kim, Han-Sung; Lim, Hee-Jeong; et al, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.6, no.1, pp.579 - 587, 2018 |
Heterogeneously integrated high-performance GaAs single-junction solar cells on copper Geum, Dae-Myeong; Park, Min-Su; Kim, SangHyeon; Choi, Won Jun; Kim, Chang Zoo; Yoon, Euijoon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.70, no.7, pp.693 - 698, 2017-04 |
High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer Roh, IlPyo; Kim, SangHyeon; Geum, Dae-Myeong; Lu, Wenjie; Song, YunHeub; del Alamo, Jesus A.; Song, JinDong, APPLIED PHYSICS LETTERS, v.113, no.9, 2018-08 |
Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1862 - 1868, 2018-05 |
In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide Kim, Sang Hyeon; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun, IEEE ELECTRON DEVICE LETTERS, v.36, no.5, pp.451 - 453, 2015-05 |
InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off Park, Min-Su; Geum, Dae-Myeong; Kyhm, Ji Hoon; Song, Jin Dong; Kim, SangHyeon; Choi, Won Jun, OPTICS EXPRESS, v.23, no.21, pp.26888 - 26894, 2015-10 |
Low-Subthreshold-Slope Asymmetric Double-Gate GaAs-on-Insulator Field-Effect-Transistors on Si Kim, SangHyeon; Geum, Dae-Myeong; Kim, Seong Kwang; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun, IEEE ELECTRON DEVICE LETTERS, v.37, no.10, pp.1261 - 1263, 2016-10 |
Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substrates Geum, Dae-Myeong; Kim, SangHyeon; Kang, SooSeok; Kim, Hosung; Park, Hwanyeol; Rho, Il Pyo; Ahn, Seung Yeop; et al, OPTICS EXPRESS, v.26, no.5, pp.6249 - 6259, 2018-03 |
Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; et al, SCIENTIFIC REPORTS, v.6, 2016-02 |
Ultra-Lightweight, Flexible InGaP/GaAs Tandem Solar Cells with a Dual-Function Encapsulation Layer Kim, Tae Soo; Kim, Hyo Jin; Geum, Dae-Myeong; Han, Jae-Hoon; Kim, In Soo; Hong, Namgi; Ryu, Geun Hwan; et al, ACS APPLIED MATERIALS & INTERFACES, v.13, no.11, pp.13248 - 13253, 2021-03 |
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