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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| FILM STRESS-RELATED VACANCY SUPERSATURATION IN SILICON UNDER LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE FILMS Ahn, SungTae; KENNEL, HW; PLUMMER, JD; TILLER, WA, JOURNAL OF APPLIED PHYSICS, v.64, no.10, pp.4914 - 4919, 1988-11 | |
| ENHANCED SB DIFFUSION IN SI UNDER THERMAL SI3N4 FILMS DURING ANNEALING IN AR Ahn, SungTae; KENNEL, HW; PLUMMER, JD; TILLER, WA, APPLIED PHYSICS LETTERS, v.53, no.17, pp.1593 - 1595, 1988-10 | |
| REDUCTION OF LATERAL PHOSPHORUS DIFFUSION IN CMOS NORMAL-WELLS Ahn, SungTae; KENNEL, HW; PLUMMER, JD; TILLER, WA, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.37, no.3, pp.806 - 807, 1990-03 | |
| EFFECT OF OXYGEN PRECIPITATION ON PHOSPHORUS DIFFUSION IN CZOCHRALSKI SILICON AHN, ST; KENNEL, HW; PLUMMER, JD; TILLER, WA; REK, ZU; STOCK, SR, APPLIED PHYSICS LETTERS, v.53, no.1, pp.34 - 36, 1988-07 | |
| A STAINING TECHNIQUE FOR THE STUDY OF TWO-DIMENSIONAL DOPANT DIFFUSION IN SILICON Ahn, SungTae; TILLER, WA, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.135, no.9, pp.2370 - 2373, 1988-09 | |
| VACANCY SUPERSATURATION IN SI UNDER SIO2 CAUSED BY SIO FORMATION DURING ANNEALING IN AR AHN, ST; KENNEL, HW; TILLER, WA; PLUMMER, JD, JOURNAL OF APPLIED PHYSICS, v.65, no.8, pp.2957 - 2963, 1989-04 | |
| A STUDY OF SILICON INTERSTITIAL KINETICS USING SILICON MEMBRANES - APPLICATIONS TO 2D DOPANT DIFFUSION Ahn, SungTae; GRIFFIN, PB; SHOTT, JD; PLUMMER, JD; TILLER, WA, JOURNAL OF APPLIED PHYSICS, v.62, no.12, pp.4745 - 4755, 1987-12 | |
| MODEL FOR BULK EFFECTS ON SI INTERSTITIAL DIFFUSIVITY IN SILICON GRIFFIN, PB; AHN, ST; TILLER, WA; PLUMMER, JD, APPLIED PHYSICS LETTERS, v.51, no.2, pp.115 - 117, 1987-07 |