VACANCY SUPERSATURATION IN SI UNDER SIO2 CAUSED BY SIO FORMATION DURING ANNEALING IN AR
- Publisher
- AMER INST PHYSICS
- Issue Date
- 1989-04
- Language
- English
- Article Type
- Article
- Citation
JOURNAL OF APPLIED PHYSICS, v.65, no.8, pp.2957 - 2963
- ISSN
- 0021-8979
- Appears in Collection
- RIMS Journal Papers
- Files in This Item
- There are no files associated with this item.
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