VACANCY SUPERSATURATION IN SI UNDER SIO2 CAUSED BY SIO FORMATION DURING ANNEALING IN AR
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | AHN, ST | ko |
| dc.contributor.author | KENNEL, HW | ko |
| dc.contributor.author | TILLER, WA | ko |
| dc.contributor.author | PLUMMER, JD | ko |
| dc.date.accessioned | 2016-11-30T01:50:57Z | - |
| dc.date.available | 2016-11-30T01:50:57Z | - |
| dc.date.created | 2016-11-10 | - |
| dc.date.created | 2016-11-10 | - |
| dc.date.issued | 1989-04 | - |
| dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.65, no.8, pp.2957 - 2963 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/214184 | - |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | VACANCY SUPERSATURATION IN SI UNDER SIO2 CAUSED BY SIO FORMATION DURING ANNEALING IN AR | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1989T892200012 | - |
| dc.identifier.scopusid | 2-s2.0-0001252734 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 65 | - |
| dc.citation.issue | 8 | - |
| dc.citation.beginningpage | 2957 | - |
| dc.citation.endingpage | 2963 | - |
| dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
| dc.identifier.doi | 10.1063/1.343412 | - |
| dc.contributor.localauthor | AHN, ST | - |
| dc.contributor.nonIdAuthor | KENNEL, HW | - |
| dc.contributor.nonIdAuthor | TILLER, WA | - |
| dc.contributor.nonIdAuthor | PLUMMER, JD | - |
| dc.type.journalArticle | Article | - |
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