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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1862 - 1868, 2018-05 | |
| Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.9, pp.3594 - 3601, 2017-09 | |
| Simulation Study on the Design of Sub-kT/q Non-hysteretic Negative Capacitance FET Using Capacitance Matching Bidenko, Pavlo; Lee, Subin; Han, Jae-Hoon; Song, Jin Dong; Kim, Sang-Hyeon, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.6, no.1, pp.910 - 921, 2018 | |
| Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun, SCIENTIFIC REPORTS, v.6, 2016-02 | |
| InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off Park, Min-Su; Geum, Dae-Myeong; Kyhm, Ji Hoon; Song, Jin Dong; Kim, SangHyeon; Choi, Won Jun, OPTICS EXPRESS, v.23, no.21, pp.26888 - 26894, 2015-10 | |
| Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate Kim, SangHyeon; Park, Min-Su; Geum, Dae-Myeong; Kim, Hosung; Ryu, GuenHwan; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Choi, Won Jun, CURRENT APPLIED PHYSICS, v.15, pp.S40 - S43, 2015-09 | |
| Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots Kim, Ho Sung; Park, Min Su; Kim, Sang Hyeon; Park, Suk In; Song, Jin Dong; Kim, Sang Hyuck; Choi, Won Jun; Park, Jung Ho, THIN SOLID FILMS, v.604, pp.81 - 84, 2016-04 | |
| Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density Kim, Seong Kwang; Geum, Dae-Myeong; Shim, Jae-Phil; Kim, Chang Zoo; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong, APPLIED PHYSICS LETTERS, v.110, no.4, 2017-01 | |
| Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors Roh, Ii Pyo; Kim, Sang Hyeon; Song, Yun Heub; Song, Jin Dong, CURRENT APPLIED PHYSICS, v.17, no.3, pp.417 - 421, 2017-03 | |
| Low-Subthreshold-Slope Asymmetric Double-Gate GaAs-on-Insulator Field-Effect-Transistors on Si Kim, SangHyeon; Geum, Dae-Myeong; Kim, Seong Kwang; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun, IEEE ELECTRON DEVICE LETTERS, v.37, no.10, pp.1261 - 1263, 2016-10 |