Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors

Cited 6 time in webofscience Cited 5 time in scopus
  • Hit : 137
  • Download : 0
We designed and fabricated an Al0.9Ga0.1Sb/In0.4Ga0.6Sb/Al0.9Ga0.1Sb quantum well (QW) with a balanced band offset for channel materials in future complementary metal-oxide-semiconductor (CMOS) circuits. The QW design was carried out by one-dimensional Schrodinger Poisson equation system. The QW was grown by molecular beam epitaxy and the crystallinity and the surface morphology were characterized using a transmission electron microscope (TEM) and atomic force microscope (AFM), respectively. The results showed good crystalline behaviors and morphologies without any identifiable morphological defects. Furthermore, we investigated the strain characteristics in In0.4Ga0.6Sb by measuring the Raman shift. We found that In0.4Ga0.6Sb has high compressive strain of 1.74% and the strain distribution was uniform. (C) 2017 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2017-03
Language
English
Article Type
Article
Citation

CURRENT APPLIED PHYSICS, v.17, no.3, pp.417 - 421

ISSN
1567-1739
DOI
10.1016/j.cap.2017.01.003
URI
http://hdl.handle.net/10203/250266
Appears in Collection
RIMS Journal Papers
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 6 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0