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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| A NOVEL LOCAL OXIDATION OF SILICON (LOCOS)-TYPE ISOLATION TECHNOLOGY FREE OF THE FIELD OXIDE THINNING EFFECT PARK, TS; AHN, SJ; AHN, ST, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.33, no.1B, pp.435 - 439, 1994-01 | |
| EFFECT OF OXYGEN PRECIPITATION ON PHOSPHORUS DIFFUSION IN CZOCHRALSKI SILICON AHN, ST; KENNEL, HW; PLUMMER, JD; TILLER, WA; REK, ZU; STOCK, SR, APPLIED PHYSICS LETTERS, v.53, no.1, pp.34 - 36, 1988-07 | |
| VACANCY SUPERSATURATION IN SI UNDER SIO2 CAUSED BY SIO FORMATION DURING ANNEALING IN AR AHN, ST; KENNEL, HW; TILLER, WA; PLUMMER, JD, JOURNAL OF APPLIED PHYSICS, v.65, no.8, pp.2957 - 2963, 1989-04 | |
| MODEL FOR BULK EFFECTS ON SI INTERSTITIAL DIFFUSIVITY IN SILICON GRIFFIN, PB; AHN, ST; TILLER, WA; PLUMMER, JD, APPLIED PHYSICS LETTERS, v.51, no.2, pp.115 - 117, 1987-07 | |
| DEPOSITION AND ELECTRICAL CHARACTERIZATION OF VERY THIN SRTIO3 FILMS FOR ULTRA LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION HWANG, CS; PARK, SO; KANG, CS; CHO, HJ; KANG, HK; AHN, ST; LEE, MY, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.34, no.9B , pp.5178 - 5183, 1995-09 | |
| AL-REFLOW PROCESS WITH A CAP-CLAMP FOR SUBMICRON CONTACT HOLES CHOI, GH; LEE, SI; PARK, CS; PARK, IS; AHN, ST; KIM, YK; REYNOLDS, R, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.34, no.2B, pp.1026 - 1029, 1995-02 | |
| EFFECT OF THE SILICIDATION REACTION CONDITION ON THE GATE OXIDE INTEGRITY IN TI-POLYCIDE GATE LEE, NI; KIM, YW; AHN, ST, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.33, no.1B, pp.672 - 677, 1994-01 |
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