Showing results 1 to 60 of 68
Backscattering Effects on the Aharonov-Bohm-type Interference Patterns in the Ballistic Limit Shin, Mincheol; Lee, S; Park, KW; Lee, EH, ICSMM-10 (10th International Conference on Superlattices, Microstructure, and Microdevices), ICSMM-10, 1997-07 |
Ballistic quantum transport in nano-scale Schottky barrier tunnel transistors Ahn, C.; Shin, Mincheol, 5th IEEE Conference on Nanotechnology, 2005, v.2, pp.741 - 744, 2005-07-11 |
Calculation of Phonon Transmission in Si/PtSi Heterostructures Oh, junghyun; Jang, MoonGyu; Shin, Mincheol, 18th International Workshop on Computational Electronics, IWCE, 2015-09-04 |
Channel engineering of silicon nanowire field effect transistor: Non-equilibrium Green's function study Hong, K.-H.; Kim, J.; Lee, S.-H.; Jin, Y.-G.; Park, S.-I.; Shin, Mincheol; Suk, S.D.; et al, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, pp.1281 - 1283, 2006-10-23 |
Charge-solitons in Closed One-dimensional Tunnel Arrays Shin, Mincheol; Lee, S; Park, KW; Lee, EH, ICSMM-10, ICSMM-10, 1997-07 |
Computational Study of p-type Germanium Nanowire Field Effect Transistors 정주영; Shin, Mincheol, 제20회 한국반도체학술대회, 한국반도체학술대회, 2013-02-06 |
Device characteristics of double-gate MOSFETs with Si-Dielectric interface model from first principle calculations Park, Y.; Kong, K.-J.; Chang, H.; Shin, Mincheol, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, 2010-06-13 |
Device characteristics of nanoscale metal/insulator tunnel transistors in the ballistic quantum transport regime Shin, Mincheol, China International Conference on Nanoscience and Technology, ChinaNANO 2005, no.PART 1, pp.525 - 528, 2005-06-09 |
Device simulation based on DFT-NEGF using equivalent transport model Jeong, Woo-Jin; Lee, Jaehyun; Kim, Seungchul; Lee, Kwang-Ryeol; Shin, Min-Cheol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-08 |
Edge Current in the Equilibrium Quantum Hall State Lee, S; Kwon, HC; Park, KW; Shin, Mincheol; Yuk, J; Lee, EH, APS March Meeting, APS March Meeting, 1997-03 |
Effect of silicide/silicon hetero-junction structure on thermoelectricity Choi, Wonchul; Park, Young-Sam; Hyun, Younghoon; Zyung, Taehyoung; Kim, Jaehyun; Kim, Soojung; Jeon, Hyojin; et al, NANO-KOREA 2012, 2012-08-17 |
Effects of ionized impurity scattering on thermopower of Si nanowires Oh, Jung Hyun; Shin, Mincheol; Jang, Moongyu, NANO-KOREA 2012, 2012-08-17 |
Effects of Strain for Nanowire Schottky Barrier p-MOSFETs Seo, Junbeom; Srivastave, Pooja; Lee, Jaehyun; Jung, Hyo Eun; Kim, Seung chul; Lee, Kwang-Ryeol; Shin, Min-Cheol, ISPSA-2014, ISPSA-2014, 2014-12-08 |
Electrical Transport Properties of Chain-Shaped Tunnel-Junction Arrays Shin, Mincheol; Lee, S; Park, KW; Lee, EH, SQS (International Workshop on Physics and Applications of Semiconductor Quantum Structures), pp.0 - 0, SQS, 1998-10-01 |
Electron Diffraction due to a Reflection Grating in a Quantum Wire Park, KW; Lee, S; Shin, Mincheol; Yuk, J; Kwon, HC; Lee, EH, IWPSD, IWPSD, 1997-12 |
Fabrication of Silicon Nanowire Based Thermoelectric Device and Temperature Sensor Calibration 최원철; Shin, Mincheol, 제19회 한국반도체학술대회, 한국반도체학술대회, 2012-02-17 |
First-Principles Calculation of Schottky-Barrier Height of the Nanostructured Silicide-Si Junction 이재현; 김성철; Shin, Mincheol, 제 12회 고등과학원 전자구조계산학회, 고등과학원, 2016-06-16 |
Full Quantum Simulations of Silicon Schottky Barrier Nanowires with Surface Roughness Scattering Jung, Hyo-Eun; Shin, Mincheol, NANO KOREA 2013, NANO KOREA, 2013-07-10 |
Full quantum-mechanical calculation of surface-roughness- limited mobility and mean-free-path in Si nanowire FETs Shin, Mincheol, Nano-S&T 2012, 2012-10-25 |
Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations Park, Y.; Kong, K.-J.; Chang, H.; Shin, Mincheol, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.1109 - 1112, IEEE, 2010-08-17 |
Hole Effective Masses in the Transport Calculation of Si Nanowire pMOSFETs Le, AT; 신민철, NANO KOREA 2009, pp.1 - 2, NANO KOREA, 2009-08 |
Importance of ionized impurity scattering on resistivity of Si nanowires Oh, Jung Hyun; Shin, Mincheol; Lee, Seok-Hee, International Workshop on Computational Electronics, IWCE, 2012-05-24 |
Injection locking of spin transfer nano-oscillators to a microwave current 강두형; Shin, Mincheol, 2013년 춘계한국물리학회, 한국물리학회, 2013-04-25 |
k.p Based Quantum Simulation of Silicon Nanowire pMOSFETs Shin, Mincheol; Lee, S.; Klimeck, G., IEEE Conference on Nanotechnology, IEEE NANO 2009, pp.374 - 377, IEEE NANO, 2009-07-26 |
Magnetic Field Dependence of the Resistance Anomaly in Superconducting Mesoscopic Aluminum Structures Lee, S; Park, KW; Shin, Mincheol; Lee, EH; Kwon, HC, NPE'97, NPE'97, 1997-09 |
Multi-scale Approach for Roughness Effect of Si-SiO2 Nanowire Interface on Electronic Transport Kim, Byung-Hyun; Kim, Seungchul; Jung, Hyo Eun; Chung, YongChae; Shin, Min-Cheol; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09 |
Multi-subband Monte Carlo Simulations of Hole Mobility in Silicon Nanowire FETs Ryu, Hoon; Jung, Ju-Young; Shin, Mincheol, IWCE-15, 2012-05-24 |
Multiple Coulomb Blockade Gaps in Small Tunnel Junction Arrays Shin, Mincheol; Lee, S; Park, KW; Lee, EH, ICSMM-11, ICSMM-11, 1998 |
Multiple Coulomb Gaps in Two-Dimensional Quantum Dot Arrays Shin, Mincheol; Lee, S; Park, KW; Lee, EH, APS March Meeting, APS March Meeting, 1998-03 |
Multiscale simulation of Schottky barrier tunnel transistors Shin, Min-Cheol; Srivastava, Pooja; Seo, Junbeom; Lee, Jaehyun; Kim, Seungchul; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09 |
NEGF Approach to Surface-Roughness-Limited Mean Free Path in Silicon Nanowire FETs Hyo-Eun Jung; Shin, Mincheol, IEEE Nanotechnology Materials and Devices Conference 2013, NMDC, 2013-10-07 |
NEGF Simulation of Nanowire Field Effect Transistors Using the Eight-band k·p method Shin, Mincheol, 2009 13th International Workshop on Computational Electronics, IWCE 2009, pp.1 - 4, 2009-05-27 |
Non-Equilibrium Green's Function Approach to Surface-Roughness-Limited Mobility in Silicon Nanowire Field Effect Transistors 정효은; 신민철, 제19회 한국반도체학술대회, 한국반도체학술대회, 2012-02-17 |
Performance Boosters for Nanoscale Schottky Barrier MOSFETs: Computational Study Shin, Mincheol, AWAD 2014, AWAD, 2014-07-02 |
Phonon scattering at the interface between elastically dissimilar materias Oh, Jung Hyun; Shin, Mincheol; Jang, Moon Kyu, 16th International Workshop on Computational Electronics, Univ. of Tokyo, 2013-07-05 |
Phonon scattering in Si nanowires due to surface roughness Oh, Jung Hyun; Shin, Mincheol; Jang, Moongyu, NANO KOREA 2011, 2011-08-25 |
Quantum mechical simulation of hole transport in p-type Si Schottky barrier MOSFETs 신민철, NANO KOREA, 대한금속재료학회, 2010-08 |
Quantum simulation of hole transport in Si nanowire pMOSFETs 신민철, 한국반도체학술대회, 한국반도체학술대회, 2010-02 |
Quantum simulation of nano-scale schottky barrier MOSFETs Shin, Mincheol; Jang, M.; Lee, S., 2004 4th IEEE Conference on Nanotechnology, pp.396 - 398, 2004-08-16 |
Quantum Simulation of p-type Nanowire Schottky Barrier MOSFETs: Silicon versus Germanium Channel 이재현; Shin, Mincheol, 제20회 한국반도체학술대회, 한국반도체학술대회, 2013-02-06 |
Quantum Simulation of Ultra-thin-body Double-Gate Negative Capacitance FETs with Sub-60mV/decade Switching Behavior Lee, Jaehyun; Jeong, Woo-Jin; Kang, Doo Hyung; Shin, Mincheol, NANO KOREA 2014, NANO KOREA, 2014-07-03 |
Quantum simulations of silicon nanowire field effect transistors: surface roughness and strain effects Shin, Min-Cheol; Jung, Hyo Eun, ISPSA-2014, ISPSA-2014, 2014-12-08 |
Quantum Transport due to a Reflection Grating in a Quantum Wire Park, K; Lee, S; Shin, Mincheol; Lee, EH; Yuk, J; Kwon, H, American Physical Society, APS March Meeting, American Physical Society, 1997-03-17 |
Quantum Transport of a Quantum Wire With a Reflection Grating Lee, S; Park, KW; Shin, Mincheol; Lee, EH; Yuk, J; Kwon, HC, IWPSD-97, IWPSD-97, 1997-12 |
Quantum Transport of Holes in Nanoscale FETs: Dependence on Channel Orientation and Impact of Heavy-hole Light-hole Coupling Shin, Mincheol, ACCMS-WGM 2011, 2011-04-01 |
Quantum-classicla crossover in biaxial nanospin system Kang, Doo Hyung; Kim, Gwang-Hee; Shin, Mincheol, NANO KOREA 2011, Nano-Korea, 2011-08-25 |
Room Temperature Investigation of Single Electron Tunneling (SET) Effects in Ag Droplets Grown on The Passivated Silicon Surface Park, KH; Ha, JS; Yun, WS; Shin, Mincheol; Park, KW; Lee, EH, STM, STM, 1997-07 |
Scaling studies of coaxially gated carbon nanotube MOSFETs Ahn, C.; Shin, Mincheol, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.548 - 549, 2006-10-22 |
Simulation of dual material gate InAs Schottky barrier field effect transistor 최원철; 이재현; 신민철, 제21회 한국반도체학술대회, 한국반도체학술대회, 2014-02-25 |
Simulation of III-V UTB SB-MOSFETs using tight-binding band-structure calculations 최호원; 이재현; 이여름; 신민철, 제21회 한국반도체학술대회, 한국반도체학술대회, 2014-02-25 |
Simulation Platform of Nano-devices as the Virtual Fab Lee, Minho; Lee, Seungchul; Shin, Min-Cheol; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09 |
Simulation study of ballistic hole current in p-type Germanium nanowire MOSFETs Jung, Ju Young; Shin, Mincheol, NANO KOREA 2013, NANO KOREA, 2013-07-10 |
Simulations of Schottky-barrier nanowire field effect transistors Lee, J.; Ahn, C.; Shin, Mincheol, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.552 - 553, 2006-10-22 |
Single Electron Charging Effect at Ag Droplets Grown on Sb-terminated Silicon Surface at Room Temperature Park, KH; Ha, JS; Shin, Mincheol; Yun, WS; Lee, EH, AVS(Americal Vaccum Society), AVS(Americal Vaccum Society), 1997-10 |
Soliton dynamics in Closed Two-dimansional Tunnel Junction Arrays Shin, Mincheol; Lee, S; Park, KW; Lee, EH, NPE'97(Nano-Physics and Electronics, '97), NPE'97, 1997-09 |
Strong Dependence of the Multichannel Ballistic Transport on the Geometrical Symmetry Shin, Mincheol; Park, KW; Lee, S; Lee, EH, ICSMM-9 (9th International Conference on Superlattices, Microstructures and Microdevices), ICSMM-9, 1996-07 |
Study of Hole-mobility Behaviors in Ultra-scaled Silicon Nanowire Field Effect Transistors: Multi-band Monte Carlo Approach 류훈; 정주영; 신민철, 제19회 한국반도체학술대회, 한국반도체학술대회, 2012-02-17 |
Surface roughness effects in Schottky Barrier tunneling transistors : comparative study against ohmic contact devices 정효은; Shin, Mincheol, 제20회 한국반도체학술대회, 한국반도체학술대회, 2013-02-06 |
Thermal conductivity of ultrathin Si films with a periodic pore pattern Oh, Jung Hyun; Choi, Won Chul; Jang, Moon Kyu; Shin, Mincheol, 17th International Workshop on Computational Electronics, IWCE 2014, 2014-06-06 |
Thermoelectric characteristics of silicon/silicide hetero-junction structured thermoelectric modules Choi, Won Chul; Zyung, Taehyoung; Kim, Soojung; Jeon, Hyojin; Shin, Min-Cheol; Jang, Moongyu, NANO KOREA 2014, NANO KOREA, 2014-07-03 |
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