Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations
- Publisher
- IEEE
- Issue Date
- 2010-08-17
- Language
- ENG
- Citation
2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.1109 - 1112
- Appears in Collection
- EE-Conference Papers(학술회의논문)
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